Sub-100 nm CMOS circuit performance with high-K gate dielectrics

Abstract

In this paper we look at the effect of fringing fields on the circuit performance by use of high permittivity (K) gate dielectrics in 70 nm CMOS technologies, from Monte-Carlo and mixed-mode simulations. Our results clearly show a decrease in the external fringing capacitance and an increase in the internal fringing capacitance, when the conventional SiO2 is replaced by high-K gate dielectrics. It also indicates an optimum K value for a given technology generation in terms of circuit and device short-channel performance. (C) 2001 Elsevier Science Ltd. All rights reserved.