Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs

Abstract

A multi-frequency transconductance technique for interface characterization of sub-micron SOI-MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in Sol devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI-MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides. (C) 2001 Elsevier Science Ltd. All rights reserved.