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|Title: ||Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs|
|Authors: ||KUMAR, A|
|Issue Date: ||2001|
|Publisher: ||PERGAMON-ELSEVIER SCIENCE LTD|
|Citation: ||MICROELECTRONICS RELIABILITY,41(7)1049-1051|
|Abstract: ||A multi-frequency transconductance technique for interface characterization of sub-micron SOI-MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in Sol devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI-MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides. (C) 2001 Elsevier Science Ltd. All rights reserved.|
|Appears in Collections:||Proceedings papers|
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