DSpace
 

DSpace at IIT Bombay >
IITB Publications >
Proceedings papers >

Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1412

Title: Multi-frequency transconductance technique for interface characterization of deep sub-micron SOI-MOSFETs
Authors: KUMAR, A
MAHAPATRA, S
LAL, R
RAO, VR
Issue Date: 2001
Publisher: PERGAMON-ELSEVIER SCIENCE LTD
Citation: MICROELECTRONICS RELIABILITY,41(7)1049-1051
Abstract: A multi-frequency transconductance technique for interface characterization of sub-micron SOI-MOSFETs is implemented. This technique is shown to be highly suitable for interface characterization in Sol devices where conventional charge-pumping techniques cannot be applied. Using this multi-frequency technique, sub-micron SOI-MNSFETs with a SiN dielectric deposited by a novel jet-vapor-deposition (JVD) process are characterized. Results are compared with charge pumping results obtained on bulk MNSFETs with identically processed JVD nitrides. (C) 2001 Elsevier Science Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/S0026-2714(01)00067-1
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14588
http://hdl.handle.net/100/1412
ISSN: 0026-2714
Appears in Collections:Proceedings papers

Files in This Item:

There are no files associated with this item.

View Statistics

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback