Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/xmlui/handle/100/13977
Title: a-Si/SiN (x) multilayered light absorber for solar cell
Authors: PANCHAL, AK
RAI, DK
MATHEW, M
SOLANKI, CS
Keywords: Chemical-Vapor-Deposition
Hot-Wire Cvd
Amorphous-Silicon
Quantum-Wells
Tandem Cells
Nitride
Issue Date: 2011
Publisher: SPRINGER
Citation: JOURNAL OF NANOPARTICLE RESEARCH,13(6)2469-2473
Abstract: 40 alternate a-Si/SiN (x) multilayer are incorporated as an absorber layer in a p-i-n solar cell. The device is fabricated using hot-wire chemical vapor deposition (HWCVD) technique. The structure of the multilayer film is examined by high resolution transmission electron microscopy (HR-TEM) which shows distinct formation of alternate a-Si and SiN (x) layers. The a-Si and SiN (x) layers have thickness of similar to 3.5 and 4 nm, respectively. The photoluminescence (PL) of multilayer film shows bandgap energy of similar to 2.52 eV, is larger than that of the c-Si and a-Si. Dark and illuminated current-voltage (I-V) characterization of the ML films shows that these ML are photosensitive. In the present work, it is seen that the p-i-n structure with i-layer as ML quantum well (QW) structures show photovoltaic effect with relatively high open-circuit voltage (V (OC)). The increment of bandgap energy in PL and high V (OC) of the device is attributed to the quantum confinement effect (QCE).
URI: http://dx.doi.org/10.1007/s11051-010-0139-4
http://dspace.library.iitb.ac.in/jspui/handle/100/13977
ISSN: 1388-0764
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