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|Title: ||Oxygen incorporation during in-situ growth of YBCO films on both sides of substrates|
|Authors: ||PAI, SP|
|Issue Date: ||1993|
|Publisher: ||INDIAN ACADEMY SCIENCES|
|Citation: ||BULLETIN OF MATERIALS SCIENCE,16(6)685-692|
|Abstract: ||Oxygen out-diffusion during cooling and heating of in situ grown YBa2Cu3O7-delta (YBCO) films in low oxygen pressure used during growth by pulsed laser deposition was studied in the temperature range 700-450-degrees-C using in situ resistance measurements. Results indicate that irrespective of the number of cooling and heating cycles seen by the films full oxygenation of the films can be realized by the final cooling from the growth temperature in 500 torr oxygen pressure. This result has been successfully used to sequentially grow high quality YBCO films on both sides of LaAlO3 substrates. These films have been used for the fabrication of X-band microstrip resonators with superconducting ground plane.|
|Appears in Collections:||Proceedings papers|
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