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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1365

Title: Aluminum-induced in situ crystallization of HWCVD a-Si : H films
Authors: GUPTA, S
CHELAWAT, H
KUMBHAR, AA
ADHIKARI, S
DUSANE, RO
Keywords: amorphous-silicon
layer exchange
Issue Date: 2008
Publisher: ELSEVIER SCIENCE SA
Citation: THIN SOLID FILMS,516(5)850-852
Abstract: Aluminum-induced in situ crystallization (AIC) of amorphous silicon films deposited by hot wire chemical vapor deposition (HWCVD) on glass is demonstrated. Aluminum was deposited at temperatures varying from room temperature to 300 degrees C on HWCVD a-Si:H films. The AIC was observed to take place in situ during the deposition of Al films, when the glass/a-Si:H temperature is kept 300 degrees C. A 20-nm Al film was effective in inducing crystallization of about 63% in the a-Si:H film. Thus, separate post-deposition annealing step can be avoided. For an Al film thickness comparable to the amorphous silicon film deposited at an optimum deposition rate, crystallization at temperature as low as 200 degrees C is observed. It was also observed that the growth pattern of c-Si in case of AIC without post-deposition annealing was identical to AIC with annealing step. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2007.06.202
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14544
http://hdl.handle.net/100/1365
ISSN: 0040-6090
Appears in Collections:Proceedings papers

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