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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1361

Title: Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectric
Authors: TIWARI, SP
SNINIVAS, P
SHRIRAM, S
KALE, NS
MHAISALKAR, SG
RAO, VR
Issue Date: 2008
Publisher: ELSEVIER SCIENCE SA
Citation: THIN SOLID FILMS,516(5)770-772
Abstract: This paper reports the use of hot-wire chemical vapour deposited (HWCVD) Silicon nitride as a passivation layer for Organic Field Effect Transistors (OFETs). Firstly, the degradation study of the OFETs is done with time. A thin (10-20 nm) layer of silicon nitride is deposited on the OFETs, at a low temperature (<90 degrees C) by HWCVD process, to passivate them from the ambient. Our results show that this technique is very effective in improving the stability of the organic semiconductors (Poly-3-hexyl thiophene (P3HT) is used as a test case in this study). This HWCVD deposited nitride can also be used as a gate dielectric material for the study of OFETs because of its higher dielectric constant and significantly less hydrogen content. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2007.06.048
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14541
http://hdl.handle.net/100/1361
ISSN: 0040-6090
Appears in Collections:Proceedings papers

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