Please use this identifier to cite or link to this item:
|Title:||A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer|
|Abstract:||In this paper, we present a new approach to obtain large size dots in an MBE grown InAs/GaAs multilayer quantum dot system. This is achieved by adding an InAlGaAs quaternary capping layer in addition to a high growth temperature (590 degrees C) GaAs capping layer with the view to tune the emission wavelength of these QDs towards the 1.3 mu m/0.95 eV region important for communication devices. Strain driven migration of In atoms from InAlGaAs alloy to the InAs QDs effectively increases the size of QDs. Microscopic investigations were carried out to study the dot size and morphology in the different layers of the grown samples. Methods to reduce structural defects like threading dislocations in multilayer quantum dot samples are also studied.|
|Appears in Collections:||Proceedings papers|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.