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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1250

Title: A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layer
Authors: CHOWDHURY, S
ADHIKARY, S
HALDER, N
CHAKRABARTI, S
Keywords: spacer layer
growth-temperature
optical-properties
inas
gaas
lasers
spectra
islands
mode
Issue Date: 2010
Publisher: VERSITA
Citation: OPTO-ELECTRONICS REVIEW,18(3)246-249
Abstract: In this paper, we present a new approach to obtain large size dots in an MBE grown InAs/GaAs multilayer quantum dot system. This is achieved by adding an InAlGaAs quaternary capping layer in addition to a high growth temperature (590 degrees C) GaAs capping layer with the view to tune the emission wavelength of these QDs towards the 1.3 mu m/0.95 eV region important for communication devices. Strain driven migration of In atoms from InAlGaAs alloy to the InAs QDs effectively increases the size of QDs. Microscopic investigations were carried out to study the dot size and morphology in the different layers of the grown samples. Methods to reduce structural defects like threading dislocations in multilayer quantum dot samples are also studied.
URI: http://dx.doi.org/10.2478/s11772-010-1032-9
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14440
http://hdl.handle.net/100/1250
ISSN: 1230-3402
Appears in Collections:Proceedings papers

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