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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1198

Title: Material dependence of negative bias temperature instability (NBTI) stress and recovery in SiON p-MOSFETs
Authors: MAHAPATRA, S
MAHETA, VD
DEORA, S
KUMAR, EN
PURAWAT, S
OLSEN, C
AHMED, K
ISLAM, AE
ALAM, MA
Keywords: i-dlin technique
interface-trap generation
field-effect transistors
degradation
issues
plasma
Issue Date: 2009
Publisher: ELECTROCHEMICAL SOCIETY INC
Citation: SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10,19(2)243-263
Abstract: Negative Bias Temperature Instability (NBTI) is studied in Silicon Oxynitride (SiON) p-MOSFETs using a recently developed Ultra-Fast On-The-Fly linear drain current (UF-OTF I(DLIN)) method. It is shown that both stress and recovery phases of NBTI are strongly influenced by SiON gate insulator process. Gate insulator nitrogen (N) spatial distribution is shown to impact interface trap generation (Delta N(IT)) and hole trapping (Delta N(h)) components of overall threshold voltage shift (Delta V(T)). A simple, self consistent method is proposed to isolate Delta N(IT) and Delta N(h). It is shown that the time dynamics of stress and recovery phases are strongly correlated, at short time governed by trapping and detrapping of holes, and at long time by generation and passivation of interface traps.
URI: http://dx.doi.org/10.1149/1.3122095
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14393
http://hdl.handle.net/100/1198
ISBN: 978-1-566777-10-0
ISSN: 1938-5862
Appears in Collections:Proceedings papers

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