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Please use this identifier to cite or link to this item: http://dspace.library.iitb.ac.in/jspui/handle/100/1192

Title: A new polarised hot filament chemical vapor deposition process for homogeneous diamond nucleation on Si(100)
Authors: COJOCARU, CS
LARIJANI, M
MISRA, DS
SINGH, MK
VEIS, R
LE NORMAND, F
Keywords: bias-enhanced nucleation
electron-emission
heteroepitaxial nucleation
glow-discharge
growth
films
silicon
cvd
plasma
mechanisms
Issue Date: 2004
Publisher: ELSEVIER SCIENCE SA
Citation: DIAMOND AND RELATED MATERIALS,13(2)270-276
Abstract: A new hot filament chemical vapor deposition with direct current plasma assistance (DC HFCVD) chamber has been designed for an intense nucleation and subsequent growth of diamond films on Si(100). Growth process as well as the I = f(V) characteristics of the DC discharge are reported. Gas phase constituents activation was obtained by a stable glow discharge between two grid electrodes coupled with two sets of parallel hot filaments settled in-between and polarised at the corresponding plasma potential. The sample is negatively biased with a small 10-15 V extraction potential with respect to the cathode grid. Such design allows to create a high density of both ions and radicals that are extracted and focussed onto the surface of the sample. The current density onto the sample can be finely tuned independently of the primary plasma. A homogeneous plasma fully covering the sample surface is visualized. Consequently, a high-density nucleation ( greater than or equal to 10(10) cm(-2)) occurs. (C) 2003 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.diamond.2003.10.076
http://dspace.library.iitb.ac.in/xmlui/handle/10054/14388
http://hdl.handle.net/100/1192
ISSN: 0925-9635
Appears in Collections:Proceedings papers

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