DSpace
 

DSpace at IIT Bombay >

Browsing by Subject GAAS

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:   
Sort by: In order: Results/Page Authors/Record:
Showing results 1 to 16 of 16
Issue DateTitleAuthor(s)
2012Comparison of luminescence properties of bilayer and multilayer InAs/GaAs quantum dotsSHAH, SY; HALDER, N; SENGUPTA, S; CHAKRABARTI, S
2012A detailed investigation on the impact of post-growth annealing on the materials and device characteristics of 35-layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As cappingADHIKARY, S; CHAKRABARTI, S
2014Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectorsGHADI, H; AGARWAL, A; ADHIKARY, S; TONGBRAM, B; MANDEL, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, S; KUMAR, A
2011Effect of high energy proton irradiation on In As/GaAs quantum dots: Enhancement of photoluminescence efficiency (up to similar to 7 times) with minimum spectral signature shiftSREEKUMAR, R; MANDAL, A; GUPTA, SK; CHAKRABARTI, S
2013Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverageMANDAL, A; VERMA, U; CHAKRABARTI, S
2015Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layerUPADHYAY, S; MANDAL, A; GHADI, H; PAL, D; BASU, A; AGARWAL, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2015Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal AnnealingGHADI, H; SHETTY, S; ADHIKARY, S; BALGARKASHI, A; MANOHAR, A; CHAKRABARTI, S
2015Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectorsTONGBRAM, B; SHETTY, S; GHADI, H; ADHIKARY, S; CHAKRABARTI, S
2015Fabrication and characterisation of gallium arsenide ambipolar quantum point contactsCHEN, JCH; KLOCHAN, O; MICOLICH, AP; DAS GUPTA, K; SFIGAKIS, F; RITCHIE, DA; TRUNOV, K; REUTER, D; WIECK, AD; HAMILTON, AR
2013Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperatureSHAH, S; GHOSH, K; JEJURIKAR, S; MISHRA, A; CHAKRABARTI, S
2014H- ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dotsSREEKUMAR, R; MANDAL, A; CHAKRABARTI, S; GUPTA, SK
2012The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAsMANDAL, A; VERMA, U; HALDER, N; CHAKRABARTI, S
2014One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layersGHADI, H; AGARWAL, A; ADHIKARY, S; AGAWANE, J; MANDAL, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, S
2013Pauli blocking dynamics in optically excited quantum dots: A picosecond excitation-correlation spectroscopic studyMONDAL, R; BANSAL, B; MANDAL, A; CHAKRABARTI, S; PAL, B
2013Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectorsMANDAL, A; GHADI, H; MATHUR, KL; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2015Quantum Beats in Hybrid Metal-Semiconductor NanostructuresDASS, CK; JARVIS, T; KUNETS, VP; MAZUR, YI; SALAMO, GG; LIENAU, C; VASA, P; LI, XQ
Showing results 1 to 16 of 16

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback