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Issue Date  Title  Author(s)  2012  Comparison of luminescence properties of bilayer and multilayer InAs/GaAs quantum dots  SHAH, SY; HALDER, N; SENGUPTA, S; CHAKRABARTI, S 
2012  A detailed investigation on the impact of postgrowth annealing on the materials and device characteristics of 35layer In0.50Ga0.50As/GaAs quantum dot infrared photodetector with quaternary In0.21Al0.21Ga0.58As capping  ADHIKARY, S; CHAKRABARTI, S 
2011  Effect of high energy proton irradiation on In As/GaAs quantum dots: Enhancement of photoluminescence efficiency (up to similar to 7 times) with minimum spectral signature shift  SREEKUMAR, R; MANDAL, A; GUPTA, SK; CHAKRABARTI, S 
2013  Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverage  MANDAL, A; VERMA, U; CHAKRABARTI, S 
2013  Groundstate energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperature  SHAH, S; GHOSH, K; JEJURIKAR, S; MISHRA, A; CHAKRABARTI, S 
2012  The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot heterostructure with quaternary capping of InAlGaAs  MANDAL, A; VERMA, U; HALDER, N; CHAKRABARTI, S 
2013  Pauli blocking dynamics in optically excited quantum dots: A picosecond excitationcorrelation spectroscopic study  MONDAL, R; BANSAL, B; MANDAL, A; CHAKRABARTI, S; PAL, B 
2013  Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H) implantation in quaternary alloycapped InAs/GaAs quantum dot infrared photodetectors  MANDAL, A; GHADI, H; MATHUR, KL; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S 
Showing results 1 to 8 of 8
