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Issue DateTitleAuthor(s)
2002Analysis of high-power EDFA operating in saturated regime at lambda=1530 nm and its performance evaluation in DWDM systemsRAVIKANTH, J; SHAH, DD; VIJAYA, R; SINGH, BP; SHEVGAONKAR, RK
2010An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealingADHIKARY, S; GHOSH, K; CHOWDHURY, S; HALDER, N; CHAKRABARTI, S
2010Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dotsSRUJAN, M; GHOSH, K; SENGUPTA, S; CHAKRABARTI, S
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