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Showing results 1 to 18 of 18
Issue DateTitleAuthor(s)
2010Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverageSENGUPTA, S; SHAH, SY; HALDER, N; CHAKRABARTI, S
2009A comprehensive study of the effect of in situ annealing at high growth temperature on the morphological and optical properties of self-assembled InAs/GaAs QDsHALDER, N; RASHMI, R; CHAKRABARTI, S; STANLEY, CR; HERRERA, M; BROWNING, ND
2010Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dotsSREEKUMAR, R; MANDAL, A; CHAKRABARTI, S; GUPTA, SK
2010Effect of post-growth rapid thermal annealing on bilayer InAs/GaAs quantum dot heterostructure grown with very thin spacer thicknessSENGUPTA, S; HALDER, N; CHAKRABARTI, S
1992GROWTH-KINETICS OF SILICON DIOXIDE ON SILICON IN AN INDUCTIVELY COUPLED RF PLASMA AT CONSTANT ANODIZATION CURRENTSCHOKSI, AJ; LAL, R; CHANDORKAR, AN
2010High-frequency dynamics of spin-polarized carriers and photons in a laserSAHA, D; BASU, D; BHATTACHARYA, P
2010Investigation of strain in self-assembled multilayer InAs/GaAs quantum dot heterostructuresADHIKARY, S; HALDER, N; CHAKRABARTI, S; MAJUMDAR, S; RAY, SK; HERRERA, M; BONDS, M; BROWNING, ND
2007Investigations of nano size defects in InP induced by swift iron ionsDUBEY, RL; DUBEY, SK; YADAV, AD; GUPTA, SJ; PANDEY, SD; RAO, TKG; MOHANTY, T; KANJILAL, D
2010A novel approach to increase emission wavelength of InAs/GaAs quantum dots by using a quaternary capping layerCHOWDHURY, S; ADHIKARY, S; HALDER, N; CHAKRABARTI, S
2008Photoluminescence Investigation of the Effects of Barrier Thickness and Monolayer Coverage on Properties of Bilayer InAs/GaAs Quantum DotsCHAKRABARTI, S; HALDER, N; SENGUPTA, S; CHARTHAD, J; GHOSH, S; STANLEY, CR
2010Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dotsSRUJAN, M; GHOSH, K; SENGUPTA, S; CHAKRABARTI, S
2010Stranski-Krastanow growth of multilayer In(Ga)As/GaAs QDs on Germanium substrateBANERJEE, S; HALDER, N; CHAKRABARTI, S
2007Study of structural and thermodynamic properties of GaAs and InAs using Monte Carlo simulationsADHIKARI, J; KUMAR, A
2004Systematic investigation of growth of InP nanowires by metalorganic vapor-phase epitaxyBHUNIA, S; KAWAMURA, T; FUJIKAWA, S; WATANABE, Y
2006Temperature dependence of the lowest excitonic transition for an InAs ultrathin quantum wellSINGH, SD; PORWAL, S; SHARMA, TK; RUSTAGI, KC
2008Tunability of Photoluminescence of InAs/GaAs Quantum Dots by Growth Pause Introduced RipeningHALDER, N; CHAKRABARTI, S; STANLEY, CR
2004Vapor-liquid-solid growth of vertically aligned InP nanowires by metalorganic vapor phase epitaxyBHUNIA, S; KAWAMURA, T; FUJIKAWA, S; NAKASHIMA, H; FURUKAWA, K; TORIMITSU, K; WATANABE, Y
2008Vertical ordering and electronic coupling in bilayer nanoscale InAs/GaAs quantum dots separated by a thin spacer layerCHAKRABARTI, S; HALDER, N; SENGUPTA, S; GHOSH, S; MISHIMA, TD; STANLEY, CR
Showing results 1 to 18 of 18

 

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