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Browsing by Author VARGHESE, D

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Showing results 1 to 13 of 13
Issue DateTitleAuthor(s)
2007A comprehensive model for PMOS NBTI degradation: Recent progressALAM, MA; KUFLUOGLU, H; VARGHESE, D; MAHAPATRA, S
2008Device design and optimization considerations for bulk FinFETsMANOJ, CR; NAGPAL, M; VARGHESE, D; RAO, VR
2005Hole energy dependent interface trap generation in MOSFET Si/SiO2 interfaceMAHAPATRA, S; VARGHESE, D; ALAM, MA
2005Impact of substrate bias on p-MOSFET negative bias temperature instabilityBHARATH KUMAR, P; DALEI, TR; VARGHESE, D; SAHA, D; MAHAPATRA, S; ALAM, MA
2006Interface-trap driven NBTI for ultrathin (EOT similar to 12A) plasma and thermal nitrided oxynitridesGUPTA, G; MAHAPATRA, S; MADHAV, LL; VARGHESE, D; AHMED, K; NOURI, F
2005Negative bias temperature instability in CMOS devicesMAHAPATRA, S; ALAM, AA; KUMAR, PB; DALEI, TR; VARGHESE, D; SAHA, D
2005On the dispersive versus arrhenius temperature activation of nbti time evolution in plasma nitrided gate oxides: measurements, theory, and implicationsVARGHESE, D; SAHA, D; MAHAPATRA, S; AHMED, K; NOURI, F; ALAM, M
2006On the generation and recovery of hot carrier induced interface traps: a critical examination of the 2-D R-D modelMAHAPATRA, S; SAHA, D; VARGHESE, D
2006On the generation and recovery of interface traps in MOSFETs subjected to NBTI, FN, and HCI stressMAHAPATRA, S; SAHA, D; VARGHESE, D; BHARATH KUMAR, P
2007On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?MAHAPATRA, S; AHMED, K; VARGHESE, D; ISLAM, AE; GUPTA, G; MADHAV, L; SAHA, D; ALAM, MA
2007Physical mechanism and gate insulator material dependence of generation and recovery of negative-bias temperature instability in p-MOSFETsVARGHESE, D; GUPTA, G; LAKKIMSETTI, LM; SAHA, D; AHMED, K; NOURI, F; MAHAPATRA, S
2007Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxationISLAM, AE; KUFLUOGLU, H; VARGHESE, D; MAHAPATRA, S; ALAM, MA
2006Role of anode hole injection and valence band hole tunneling on interface trap generation during hot carrier injection stressMAHAPATRA, S; SAHA, D; VARGHESE, D
Showing results 1 to 13 of 13

 

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