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DSpace at IIT Bombay >
Browsing by Author SHRIVASTAVA, M
Showing results 1 to 14 of 14
| Issue Date | Title | Author(s) | | 2009 | Benchmarking the device performance at SUB 22 NM node technologies using an SOC framework | SHRIVASTAVA, M; VERMA, B; BAGHINI, MS; RUSS, C; SHARMA, DK; GOSSNER, H; RAO, VR |
| 2006 | Emissions from open biomass burning in India: Integrating the inventory approach with high-resolution Moderate Resolution Imaging Spectroradiometer (MODIS) active-fire and land cover data | VENKATARAMAN, C; HABIB, G; KADAMBA, D; SHRIVASTAVA, M; LEON, JF; CROUZILLE, B; BOUCHER, O; STREETS, DG |
| 2009 | Filament study of sti type drain extended nmos device using transient interferometric mapping | SHRIVASTAVA, M; BYCHIKHIN, S; POGANY, D; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; GORNIK, E; RAO, VR |
| 2009 | Highly resistive body STI Ndemos : an optimized demos device to achieve moving current filaments for robust ESD protection | SHRIVASTAVA, M; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; RAO, VR |
| 2004 | New methodology for estimating biofuel consumption for cooking: Atmospheric emissions of black carbon and sulfur dioxide from India | HABIB, G; VENKATARAMAN, C; SHRIVASTAVA, M; BANERJEE, R; STEHR, JW; DICKERSON, RR |
| 2009 | A new physical insight and 3D device modeling of sti type denmos device failure under ESD conditions | SHRIVASTAVA, M; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; RAO, VR |
| 2010 | A Novel Bottom Spacer FinFET Structure for Improved Short-Channel, Power-Delay, and Thermal Performance | SHRIVASTAVA, M; BAGHINI, MS; SHARMA, DK; RAO, VR |
| 2010 | On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD condition | SHRIVASTAVA, M; BYCHIKHIN, S; POGANY, D; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; GORNIK, E; RAO, VR |
| 2010 | On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditions | SHRIVASTAVA, M; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; RAO, VR |
| 2010 | Part II: A Novel Scheme to Optimize the Mixed-Signal Performance and Hot-carrier Reliability of Drain-Extended MOS Devices | SHRIVASTAVA, M; BAGHINI, MS; GOSSNER, H; RAO, VR |
| 2010 | Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD Conditions | SHRIVASTAVA, M; GOSSNER, H; BAGHINI, MS; RAO, VR |
| 2010 | Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS Devices | SHRIVASTAVA, M; BAGHINI, MS; GOSSNER, H; RAO, VR |
| 2010 | Part I: On the Behavior of STI-Type DeNMOS Device Under ESD Conditions | SHRIVASTAVA, M; GOSSNER, H; SHOJAEI, M; RAO, VR |
| 2010 | A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device | SHRIVASTAVA, M; JAIN, R; BAGHINI, MS; GOSSNER, H; RAO, VR |
Showing results 1 to 14 of 14
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