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Issue DateTitleAuthor(s)
2003Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devicesPATIL, SAMADHAN B; VAIRAGAR, ANAND V; KUMBHAR, ALKA A; SAHU, LAXMI; RAMGOPAL RAO, V; VENKATRAMANI, N; DUSANE, RO; SCHROEDER, B
2001Is the nucleation and coalescence behavior in the growth of a-Si:H films prepared by the CAT-CVD different?DUSANE, RO; BAUER, S; SCHROEDER, B; OECHSNER, H
2006Microcrystalline single and double junction silicon based solar cells entirely prepared by HWCVD on textured zinc oxide substrateKUMAR, P; KUPICH, M; BOCK, W; DUSANE, RO; SCHROEDER, B
2006One-dimensional simulation study of microcrystalline silicon thin films for solar cell and thin film transistor applications using AMPS-1DTRIPATHI,S; VENKATARAMANI, N; DUSANE, RO; SCHROEDER, B
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