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Browsing by Author NAINANI, A

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Issue DateTitleAuthor(s)
2013Contact resistivity reduction through interfacial layer doping in metal-interfacial layer-semiconductor contactsGUPTA, S; MANIK, PP; MISHRA, RK; NAINANI, A; ABRAHAM, MC; LODHA, S
2007Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operationNAINANI, A; PALIT, S; SINGH, PK; GANGULY, U; KRISHNA, N; VASI, J; MAHAPATRA, S
2015Enhanced Ge n(+)/p Junction Performance Using Cryogenic Phosphorus ImplantationBHATT, P; SWARNKAR, P; MISRA, A; BISWAS, J; HATEM, C; NAINANI, A; LODHA, S
2014Epitaxially Defined FinFET: Variability Resistant and High-Performance TechnologyMITTAL, S; GUPTA, S; NAINANI, A; ABRAHAM, MC; SCHUEGRAF, K; LODHA, S; GANGULY, U
2007Extensive reliability analysis of Tungsten dot NC devices embedded in HfAlO high-k dielectric under NAND (FN/FN) operationSINGH, PK; NAINANI, A
2012Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layerMANIK, PP; MISHRA, RK; KISHORE, VP; RAY, P; NAINANI, A; HUANG, YC; ABRAHAM, MC; GANGULY, U; LODHATA, S
2013Germanium oxynitride gate interlayer dielectric formed on Ge(100) using decoupled plasma nitridationBHATT, P; CHAUDHURI, K; KOTHARI, S; NAINANI, A; LODHA, S
2014High Performance 400 degrees C p(+)/n Ge Junctions Using Cryogenic Boron ImplantationBHATT, P; SWARNKAR, P; BASHEER, F; HATEM, C; NAINANI, A; LODHA, S
Showing results 1 to 8 of 8


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