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Browsing by Author MANDAL, A

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Issue DateTitleAuthor(s)
2013Comprehensive study on molecular beam epitaxy-grown InAs sub-monolayer quantum dots with different capping combinationsSENGUPTA, S; MANDAL, A; GHADI, H; CHAKRABARTI, S; MATHUR, KL
2010Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dotsSREEKUMAR, R; MANDAL, A; CHAKRABARTI, S; GUPTA, SK
2011Effect of high energy proton irradiation on In As/GaAs quantum dots: Enhancement of photoluminescence efficiency (up to similar to 7 times) with minimum spectral signature shiftSREEKUMAR, R; MANDAL, A; GUPTA, SK; CHAKRABARTI, S
2013Effects of ex situ annealing on quaternary alloy (InAlGaAs) capped InAs/GaAs quantum dot heterostructures on optimization of optoelectronic and structural properties with variation in growth rate, barrier thickness, and seed quantum dot monolayer coverageMANDAL, A; VERMA, U; CHAKRABARTI, S
2015Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layerUPADHYAY, S; MANDAL, A; GHADI, H; PAL, D; BASU, A; AGARWAL, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2015Evidence for Bidirectional Noninnocent Behavior of a Formazanate Ligand in Ruthenium ComplexesMANDAL, A; SCHWEDERSKI, B; FIEDLER, J; KAIM, W; LAHIRI, GK
2014H- ion implantation induced ten-fold increase of photoluminescence efficiency in single layer InAs/GaAs quantum dotsSREEKUMAR, R; MANDAL, A; CHAKRABARTI, S; GUPTA, SK
2012The impact of monolayer coverage, barrier thickness and growth rate on the thermal stability of photoluminescence of coupled InAs/GaAs quantum dot hetero-structure with quaternary capping of InAlGaAsMANDAL, A; VERMA, U; HALDER, N; CHAKRABARTI, S
2013Magneto-optical Kerr effect spectroscopy based study of Lande g-factor for holes in GaAs/AlGaAs single quantum wells under low magnetic fieldsARORA, A; MANDAL, A; CHAKRABARTI, S; GHOSH, S
2013More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-)MANDAL, A; AGARWAL, A; GHADI, H; KUMARI, KCG; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2015Noninnocently Behaving Bridging Anions of the Widely Distributed Antioxidant Ellagic Acid in Diruthenium ComplexesMANDAL, A; GRUPP, A; SCHWEDERSKI, B; KAIM, W; LAHIRI, GK
2014One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layersGHADI, H; AGARWAL, A; ADHIKARY, S; AGAWANE, J; MANDAL, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, S
2013Pauli blocking dynamics in optically excited quantum dots: A picosecond excitation-correlation spectroscopic studyMONDAL, R; BANSAL, B; MANDAL, A; CHAKRABARTI, S; PAL, B
2013Proposed mechanism to represent the suppression of dark current density by four orders with low energy light ion (H-) implantation in quaternary alloy-capped InAs/GaAs quantum dot infrared photodetectorsMANDAL, A; GHADI, H; MATHUR, KL; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2014Sensitivity of the Valence Structure in Diruthenium Complexes As a Function of Terminal and Bridging LigandsMANDAL, A; AGARWALA, H; RAY, R; PLEBST, S; MOBIN, SM; PRIEGO, JL; JIMENEZ-APARICIO, R; KAIM, W; LAHIRI, GK
2014Sensitivity of the Valence Structure in Diruthenium Complexes As a Function of Terminal and Bridging LigandsMANDAL, A; AGARWALA, H; RAY, R; PLEBST, S; MOBIN, SM; PRIEGO, JL; JIMENEZ-APARICIO, R; KAIM, W; LAHIRI, GK
2010Structural and electrical properties of rectifying p-ZnO/n(+)-InP heterojunctionMANDAL, A; CHAKRABARTI, S
2013Thermal stability of quaternary alloy (InAlGaAs)-capped InAs/GaAs multilayer quantum dot heterostructures with variation in growth rate, barrier thickness, seed quantum dot monolayer coverage, and post-growth annealingMANDAL, A; VERMA, U; CHAKRABARTI, S
2014Varying electronic structural forms of ruthenium complexes of non-innocent 9,10-phenanthrenequinonoid ligandsMANDAL, A; KUNDU, T; EHRET, F; BUBRIN, M; MOBIN, SM; KAIM, W; LAHIRI, GK
2014Varying electronic structural forms of ruthenium complexes of non-innocent 9,10-phenanthrenequinonoid ligandsMANDAL, A; KUNDU, T; EHRET, F; BUBRIN, M; MOBIN, SM; KAIM, W; LAHIRI, GK
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