|
|
DSpace at IIT Bombay >
Browsing by Author LAL, RAKESH
Showing results 1 to 11 of 11
| Issue Date | Title | Author(s) | | 2001 | Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressing | KHAMESRA, A; LAL, RAKESH; VASI, J; AKUMAR, KP; SIN, KO |
| 1998 | Electrochemistry of polyaniline Langmuir–Blodgett films | DABKE, RB; DHANABALAN, A; MAJOR, SS; TALWAR, SS; LAL, RAKESH; CONTRACTOR, AQ |
| 2005 | A low-power and compact analog CMOS processing chip for portable ECG recorders | BAGHINI, MS; LAL, RAKESH; SHARMA, DK |
| 2002 | MEMS: technology, design, CAD and applications | LAL, RAKESH; APTE, PR; BHAT, KN; BOSE, G; CHANDRA, S; SHARMA, DK |
| 1993 | Net positive-charge buildup in various MOS insulators due to high-field stressing | VASI, J; PATRIKAR, RM; LAL, RAKESH |
| 2007 | A novel dry method for surface modification of SU-8 for immobilization of biomolecules in Bio-MEMS | JOSHI, M; KALE, NITIN; LAL, RAKESH; RAMGOPAL RAO, V; MUKHERJI, SOUMYA |
| 2001 | Photoluminescent, wide-bandgap a-SiC:H alloy films deposited by Cat- CVD using acetylene | KUMBHAR, ALKA A; PATIL, SAMADHAN B; KUMAR, SANJAY; LAL, RAKESH; DUSANE, RO |
| 2002 | Physical mechanisms for pulsed AC stress degradation in thin gate oxide MOSFETs | MUTHA, YATIN M; LAL, RAKESH; RAMGOPAL RAO, V |
| 2005 | SEU reliability analysis of advanced deep-submicron transistors | VASI, J; JAIN, PALKESH; LAL, RAKESH |
| 2004 | Single-event-induced barrier lowering in deep-submicron MOS devices and circuits | JAIN, PALKESH; VASI, J; LAL, RAKESH |
| 2004 | An ultra low-power CMOS instrumentation amplifier for biomedical applications | BAGHINI, MS; LAL, RAKESH; SHARMA, DK |
Showing results 1 to 11 of 11
|
