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DSpace at IIT Bombay >
Browsing by Author HARIHARAN, V
Showing results 1 to 6 of 6
| Issue Date | Title | Author(s) | | 2009 | A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETs | HARIHARAN, V; VASI, J; RAO, VR |
| 2008 | Closed form current and conductance model for symmetric double-gate MOSFETs using field-dependent mobility and body doping | HARIHARAN, V; THAKKER, R; PATIL, MB; VASI, J; RAO, VR |
| 2009 | Drain current model for nanoscale double-gate MOSFETs | HARIHARAN, V; THAKKER, R; SINGH, K; SACHID, AB; PATIL, MB; VASI, J; RAO, VR |
| 2007 | Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2 | HARIHARAN, V; VASI, J; RAO, VR |
| 2009 | An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs | HARIHARAN, V; VASI, J; RAO, VR |
| 2007 | Parasitic effects in multi-gate MOSFETs | KOBAYASHI, Y; MANOJ, CR; TSUTSUI, K; HARIHARAN, V; KAKUSHIMA, K; RAO, VR; AHMET, P; IWAI, H |
Showing results 1 to 6 of 6
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