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Browsing by Author GOSSNER, H

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Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
2009Benchmarking the device performance at SUB 22 NM node technologies using an SOC frameworkSHRIVASTAVA, M; VERMA, B; BAGHINI, MS; RUSS, C; SHARMA, DK; GOSSNER, H; RAO, VR
2009Filament study of sti type drain extended nmos device using transient interferometric mappingSHRIVASTAVA, M; BYCHIKHIN, S; POGANY, D; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; GORNIK, E; RAO, VR
2009Highly resistive body STI Ndemos : an optimized demos device to achieve moving current filaments for robust ESD protectionSHRIVASTAVA, M; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; RAO, VR
2009A new physical insight and 3D device modeling of sti type denmos device failure under ESD conditionsSHRIVASTAVA, M; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; RAO, VR
2010On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD conditionSHRIVASTAVA, M; BYCHIKHIN, S; POGANY, D; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; GORNIK, E; RAO, VR
2010On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditionsSHRIVASTAVA, M; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; RAO, VR
2010Part II: A Novel Scheme to Optimize the Mixed-Signal Performance and Hot-carrier Reliability of Drain-Extended MOS DevicesSHRIVASTAVA, M; BAGHINI, MS; GOSSNER, H; RAO, VR
2010Part II: On the Three-Dimensional Filamentation and Failure Modeling of STI Type DeNMOS Device Under Various ESD ConditionsSHRIVASTAVA, M; GOSSNER, H; BAGHINI, MS; RAO, VR
2010Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS DevicesSHRIVASTAVA, M; BAGHINI, MS; GOSSNER, H; RAO, VR
2010Part I: On the Behavior of STI-Type DeNMOS Device Under ESD ConditionsSHRIVASTAVA, M; GOSSNER, H; SHOJAEI, M; RAO, VR
2010A Solution Toward the OFF-State Degradation in Drain-Extended MOS DeviceSHRIVASTAVA, M; JAIN, R; BAGHINI, MS; GOSSNER, H; RAO, VR
Showing results 1 to 11 of 11

 

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