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Browsing by Author GHOSH, K

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Issue DateTitleAuthor(s)
2011Annealing of In(0.45)Ga(0.55)As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devicesGHOSH, K; KUNDU, S; HALDER, N; SRUJAN, M; SENGUPTA, S; CHAKRABARTI, S
2010An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealingADHIKARY, S; GHOSH, K; CHOWDHURY, S; HALDER, N; CHAKRABARTI, S
2003Double magnetic transition and anomalous magnetoresistance in Er2Ni3Si5MAZUMDAR, CHANDAN; NAGARAJAN, R; NIGAM, AK; GHOSH, K; RAMAKRISHNAN, S; GUPTA, LC; PADALIA, BD
2011Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealingSENGUPTA, S; SHAH, SY; GHOSH, K; HALDER, N; CHAKRABARTI, S
1999Low-temperature heat-capacity studies of R2Ni3Si5 (R = Pr, Nd, Sm, Gd, Tb, Dy, Ho)MAZUMDAR, C; GHOSH, K; NAGARAJAN, R; RAMAKRISHNAN, S; PADALIA, BD; GUPTA, LC
1994Magnetic and superconducting properties of tlsr2ca1-xrxcu2o7 [r = gd (x=0.6,1.0) - ho, yb (x=1.0)] - high tn (=3.1-k) in a gd systemSUNDARESAN, A; GHOSH, K; RAMAKRISHNAN, S; GUPTA, LC; CHANDRA, G; SHARON, M; VIJAYARAGHAVAN, R
2010Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dotsSRUJAN, M; GHOSH, K; SENGUPTA, S; CHAKRABARTI, S
1995SUPERCONDUCTING AND MAGNETIC-PROPERTIES OF TLSR2CA(1-X)R(X)CU(2)O(7) [R=PR,TB]SUNDARESAN, A; CHINCHURE, AD; GHOSH, K; RAMAKRISHNAN, S; MARATHE, VR; GUPTA, LC; SHARON, M; SHAH, SS
1994Superconductivity in the ternary nickel silicide lu2ni3si5MAZUMDAR, C; GHOSH, K; RAMAKRISHNAN, S; NAGARAJAN, R; GUPTA, LC; CHANDRA, G; PADALIA, BD; VIJAYARAGHAVAN, R
2009Trajectory Approach to Two-State Kinetics of Single Particles on Sculpted Energy LandscapesWU, D; GHOSH, K; INAMDAR, M; LEE, HJ; FRASER, S; DILL, K; PHILLIPS, R
Showing results 1 to 10 of 10

 

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