Browsing by Author GHOSH, K

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Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
2011Annealing of In(0.45)Ga(0.55)As/GaAs quantum dots overgrown with large monolayer (11 ML) coverage for applications in thermally stable optoelectronic devicesGHOSH, K; KUNDU, S; HALDER, N; SRUJAN, M; SENGUPTA, S; CHAKRABARTI, S
2010An approach to suppress the blue-shift of photoluminescence peaks in coupled multilayer InAs/GaAs quantum dots by high temperature post-growth annealingADHIKARY, S; GHOSH, K; CHOWDHURY, S; HALDER, N; CHAKRABARTI, S
2013A detailed investigation on the impact of variation in growth rate, monolayer coverage and barrier thickness on the optical characteristics of InAs/GaAs bilayer quantum dot heterostructuresBASU, N; GHOSH, K; KABI, S; SENGUPTA, S; CHAKRABARTI, S
2003Double magnetic transition and anomalous magnetoresistance in Er2Ni3Si5MAZUMDAR, CHANDAN; NAGARAJAN, R; NIGAM, AK; GHOSH, K; RAMAKRISHNAN, S; GUPTA, LC; PADALIA, BD
2017Epitaxial Gd2O3 on GaN and AlGaN: a potential candidate for metal oxide semiconductor based transistors on Si for high power applicationGHOSH, K; DAS, S; KHIANGTE, KR; CHOUDHURY, N; LAHA, A
2013Epitaxial Gd2O3 on strained Si1-xGex layers for next generation complementary metal oxide semiconductor device applicationGHOSH, K; DAS, S; FISSEL, A; OSTEN, HJ; LAHA, A
2013Ground-state energy trends in single and multilayered coupled InAs/GaAs quantum dots capped with InGaAs layers: Effects of InGaAs layer thickness and annealing temperatureSHAH, S; GHOSH, K; JEJURIKAR, S; MISHRA, A; CHAKRABARTI, S
2011Investigation of the effect of larger monolayer coverage in the active layer of bilayer InAs/GaAs quantum-dot structure and effects of post-growth annealingSENGUPTA, S; SHAH, SY; GHOSH, K; HALDER, N; CHAKRABARTI, S
2016Long-Term Stability of Epitaxial (Nd1-xGdx)(2)O-3 Thin Films Grown on Si(001) for Future CMOS DevicesGHOSH, K; DAS, S; FISSEL, A; OSTEN, HJ; LAHA, A
1999Low-temperature heat-capacity studies of R2Ni3Si5 (R = Pr, Nd, Sm, Gd, Tb, Dy, Ho)MAZUMDAR, C; GHOSH, K; NAGARAJAN, R; RAMAKRISHNAN, S; PADALIA, BD; GUPTA, LC
1994Magnetic and superconducting properties of tlsr2ca1-xrxcu2o7 [r = gd (x=0.6,1.0) - ho, yb (x=1.0)] - high tn (=3.1-k) in a gd systemSUNDARESAN, A; GHOSH, K; RAMAKRISHNAN, S; GUPTA, LC; CHANDRA, G; SHARON, M; VIJAYARAGHAVAN, R
2017Modeling studies on coagulation of charged particles and comparison with experimentsGHOSH, K; TRIPATHI, SN; JOSHI, M; MAYYA, YS; KHAN, A; SAPRA, BK
2010Presentation and experimental validation of a model for the effect of thermal annealing on the photoluminescence of self-assembled InAs/GaAs quantum dotsSRUJAN, M; GHOSH, K; SENGUPTA, S; CHAKRABARTI, S
1994Superconductivity in the ternary nickel silicide lu2ni3si5MAZUMDAR, C; GHOSH, K; RAMAKRISHNAN, S; NAGARAJAN, R; GUPTA, LC; CHANDRA, G; PADALIA, BD; VIJAYARAGHAVAN, R
2009Trajectory Approach to Two-State Kinetics of Single Particles on Sculpted Energy LandscapesWU, D; GHOSH, K; INAMDAR, M; LEE, HJ; FRASER, S; DILL, K; PHILLIPS, R
2017Tuning the effective band gap and finding the optimal growth condition of InN thin films on GaN/sapphire substrates by plasma assisted molecular beam epitaxy techniqueGHOSH, K; RATHORE, JS; LAHA, A