Browsing by Author GHADI, H

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Issue DateTitleAuthor(s)
2016AuGe surface plasmon enhances photoluminescence of the InAs/GaAs bilayer quantum dot heterostructurePANDEY, SK; TYAGI, L; SHETE, P; GHADI, H; RAWOOL, H; MURKUTE, P; CHAKRABARTI, S
2015Comparison of Three Design Architectures for Quantum Dot Infrared Photodetectors: InGaAs-Capped Dots, Dots-in-a-Well, and Submonolayer Quantum DotsGHADI, H; SENGUPTA, S; SHETTY, S; MANOHAR, A; BALGARKASHI, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, SL; KUMAR, A
2013Comprehensive study on molecular beam epitaxy-grown InAs sub-monolayer quantum dots with different capping combinationsSENGUPTA, S; MANDAL, A; GHADI, H; CHAKRABARTI, S; MATHUR, KL
2015A detailed study of the effects of rapid thermal annealing on the luminescence properties of InAs sub-monolayer quantum dotsMANOHAR, A; SENGUPTA, S; GHADI, H; CHAKRABARTI, S
2014Effect of barrier thickness on structural, optical, and spectral behaviors of vertically strain coupled InAs/GaAs quantum dot infrared photodetectorsGHADI, H; AGARWAL, A; ADHIKARY, S; TONGBRAM, B; MANDEL, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, S; KUMAR, A
2015Effects of high energy proton implantation on the optical and electrical properties of In(Ga)as/GaAs QD heterostructures with variations in the capping layerUPADHYAY, S; MANDAL, A; GHADI, H; PAL, D; BASU, A; AGARWAL, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2016Enhancement in multicolor photoresponse for quaternary capped In0.5Ga0.5As/GaAs quantum dot infrared photodetectors implanted with hydrogen ionsUPADHYAY, S; MANDAL, A; AGARWAL, A; GHADI, H; KUMARI, KCG; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2017Enhancement in optical characteristics of c-axis-oriented radio frequency-sputtered ZnO thin films through growth ambient and annealing temperature optimizationMURKUTE, P; GHADI, H; SAHA, S; PANDEY, SK; CHAKRABARTI, S
2015Enhancement in Peak Detectivity and Operating Temperature of Strain-Coupled InAs/GaAs Quantum Dot Infrared Photodetectors by Rapid Thermal AnnealingGHADI, H; SHETTY, S; ADHIKARY, S; BALGARKASHI, A; MANOHAR, A; CHAKRABARTI, S
2015Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectorsTONGBRAM, B; SHETTY, S; GHADI, H; ADHIKARY, S; CHAKRABARTI, S
2017Enhancement of device performance by using quaternary capping over ternary capping in strain-coupled InAs/GaAs quantum dot infrared photodetectors (vol 118, pg 511, 2015)TONGBRAM, B; SHETTY, S; GHADI, H; ADHIKARY, S; CHAKRABARTI, S
2017Evidence of quantum dot size uniformity in strain-coupled multilayered In (Ga)As/GaAs QDs grown with constant overgrowth percentagePANDA, D; AHMAD, A; GHADI, H; ADHIKARY, S; TONGBRAM, B; CHAKRABARTI, S
2017The impact of confinement enhancement AlGaAs barrier on the optical and structural properties of InAs/InGaAs/GaAs submonolayer quantum dot heterostructuresDAS, D; GHADI, H; TONGBRAM, B; SINGH, SM; CHAKRABARTI, S
2016Increasing peak detectivity (D*) of In0.5Ga0.5As/GaAs quantum dot infrared photodetectors by up to two orders with high-energy proton implantationUPADHYAY, S; MANDAL, A; GHADI, H; PAL, D; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2017Indigenous development of 320 x 256 focal-plane array using InAs/InGaAs/GaAs quantum dots-in-a-well infrared detectors for thermal imagingKUMARI, KCG; GHADI, H; SAMUDRAIAH, DRM; CHAKRABARTI, S
2017Minimization of material inter-diffusion for thermally stable quaternary-capped InAs quantum dot via strain modificationGHADI, H; SEHARA, N; MURKUTE, P; CHAKRABARTI, S
2013More than one order enhancement in peak detectivity (D*) for quantum dot infrared photodetectors implanted with low energy light ions (H-)MANDAL, A; AGARWAL, A; GHADI, H; KUMARI, KCG; BASU, A; SUBRAHMANYAM, NBV; SINGH, P; CHAKRABARTI, S
2014One order enhancement of detectivity in quaternary capped InAs/GaAs quantum dot infrared photodetectors due to vertical coupling of quantum dot layersGHADI, H; AGARWAL, A; ADHIKARY, S; AGAWANE, J; MANDAL, A; CHAKRABARTI, S; PENDYALA, NB; PRAJAPATI, S
2015The optical properties of strain-coupled InAs/GaAs quantum-dot heterostructures with varying thicknesses of GaAs and InGaAs spacer layersSHETTY, S; ADHIKARY, S; TONGBRAM, B; AHMAD, A; GHADI, H; CHAKRABARTI, S
2016Optimization of the Number of Stacks in the Submonolayer Quantum Dot Heterostructure for Infrared PhotodetectorsDAS, D; GHADI, H; SENGUPTA, S; AHMAD, A; MANOHAR, A; CHAKRABARTI, S