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Showing results 1 to 14 of 14
Issue DateTitleAuthor(s)
2013Band gap bowing and band offsets in relaxed and strained Si1-xGex alloys by employing a new nonlinear interpolation schemeSANT, S; LODHA, S; GANGULY, U; MAHAPATRA, S; HEINZ, FO; SMITH, L; MOROZ, V; GANGULY, S
2007Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operationNAINANI, A; PALIT, S; SINGH, PK; GANGULY, U; KRISHNA, N; VASI, J; MAHAPATRA, S
2008The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flashSANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S
2009Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase OperationSANDHYA, C; GANGULY, U; CHATTAR, N; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, JA; MAHAPATRA, S
2012Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layerMANIK, PP; MISHRA, RK; KISHORE, VP; RAY, P; NAINANI, A; HUANG, YC; ABRAHAM, MC; GANGULY, U; LODHATA, S
2013The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array PerformanceMANDAPATI, R; BORKAR, AS; SRINIVASAN, VSS; BAFNA, P; KARKARE, P; LODHA, S; GANGULY, U
2009Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under (FN/FN) OperationSANDHYA, C; OAK, AB; CHATTAR, N; JOSHI, AS; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
2009Influence of SiN composition on program and erase characteristics of SANOS-type flash memoriesSANDHYA, C; GANGULY, U; APOORVA, B; OLSEN, C; SEUTTER, S; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
2012Nanocrystal-based Ohmic contacts on n and p-type germaniumKISHORE, VP; PARAMAHANS, P; SADANA, S; GANGULY, U; LODHA, S
2008Nitride engineering and the effect of interfaces on charge trap flash performance and reliabilitySANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S
2013On Pairing of Bipolar RRAM Memory With NPN Selector Based on Set/Reset Array Power ConsiderationsMANDAPATI, R; BORKAR, A; SRINIVASAN, VSS; BAFNA, P; KARKARE, P; LODHA, S; RAJENDRAN, B; GANGULY, U
2012Punchthrough-Diode-Based Bipolar RRAM Selector by Si EpitaxySRINIVASAN, VSS; CHOPRA, S; KARKARE, P; BAFNA, P; LASHKARE, S; KUMBHARE, P; KIM, Y; SRINIVASAN, S; KUPPURAO, S; LODHA, S; GANGULY, U
2009Recent advances in charge trap flash memoriesSANDHYA, C; SINGH, PK; GUPTA, S; ROHRA, H; SHIVATHEJA, M; GANGULY, U; HOFMANN, R; MUKHOPADHYAY, G; MAHAPATRA, S; VASI, J
2010Study of P/E Cycling Endurance Induced Degradation in SANOS Memories Under NAND (FN/FN) OperationSANDHYA, C; OAK, AB; CHATTAR, N; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
Showing results 1 to 14 of 14

 

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