Browsing by Author GANGULY, U

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Issue DateTitleAuthor(s)
2017Analytical Estimation of Threshold Voltage Variability by Metal Gate Granularity in FinFETVARDHAN, PH; MITTAL, S; GANGULY, S; GANGULY, U
2017Analytical Model to Estimate FinFET's I-ON, I-OFF, SS, and V-T Distribution Due to FERMITTAL, S; AMITA; SHEKHAWAT, AS; GANGULY, S; GANGULY, U
2016An Analytical Model to Estimate FinFET's V-T Distribution Due to Fin-Edge RoughnessMITTAL, S; SHEKHAWAT, AS; GANGULY, U
2017An Analytical Model to Estimate V-T Distribution of Partially Correlated Fin Edges in FinFETs Due to Fin-Edge RoughnessMITTAL, AS; GANGULY, U
2017Arbitrary Spike Time Dependent Plasticity (STDP) in Memristor by Analog Waveform EngineeringPANWAR, N; RAJENDRAN, B; GANGULY, U
2013Band gap bowing and band offsets in relaxed and strained Si1-xGex alloys by employing a new nonlinear interpolation schemeSANT, S; LODHA, S; GANGULY, U; MAHAPATRA, S; HEINZ, FO; SMITH, L; MOROZ, V; GANGULY, S
2007Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operationNAINANI, A; PALIT, S; SINGH, PK; GANGULY, U; KRISHNA, N; VASI, J; MAHAPATRA, S
2008The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flashSANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S
2009Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase OperationSANDHYA, C; GANGULY, U; CHATTAR, N; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, JA; MAHAPATRA, S
2014Epitaxially Defined FinFET: Variability Resistant and High-Performance TechnologyMITTAL, S; GUPTA, S; NAINANI, A; ABRAHAM, MC; SCHUEGRAF, K; LODHA, S; GANGULY, U
2012Fermi-level unpinning and low resistivity in contacts to n-type Ge with a thin ZnO interfacial layerMANIK, PP; MISHRA, RK; KISHORE, VP; RAY, P; NAINANI, A; HUANG, YC; ABRAHAM, MC; GANGULY, U; LODHATA, S
2013The Impact of n-p-n Selector-Based Bipolar RRAM Cross-Point on Array PerformanceMANDAPATI, R; BORKAR, AS; SRINIVASAN, VSS; BAFNA, P; KARKARE, P; LODHA, S; GANGULY, U
2009Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under (FN/FN) OperationSANDHYA, C; OAK, AB; CHATTAR, N; JOSHI, AS; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
2015Improved Off-Current and Modeling in Sub-430 degrees C Si p-i-n Selector for Unipolar Resistive Random Access MemoryMANDAPATI, R; SHRIVASTAVA, S; SUSHAMA, S; SAHA, B; SCHULZE, J; GANGULY, U
2009Influence of SiN composition on program and erase characteristics of SANOS-type flash memoriesSANDHYA, C; GANGULY, U; APOORVA, B; OLSEN, C; SEUTTER, S; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
2017Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFETDUTTA, S; KUMAR, V; SHUKLA, A; MOHAPATRA, NR; GANGULY, U
2017Memory Performance of a Simple Pr0.7Ca0.3MnO3-Based Selectorless RRAMKUMBHARE, P; CHAKRABORTY, I; KHANNA, A; GANGULY, U
2014Morphology and Curie temperature engineering in crystalline La0.7Sr0.3MnO3 films on Si by pulsed laser depositionNORI, R; KALE, SN; GANGULY, U; RAJU, NRC; SUTAR, DS; PINTO, R; RAO, VR
2012Nanocrystal-based Ohmic contacts on n and p-type germaniumKISHORE, VP; PARAMAHANS, P; SADANA, S; GANGULY, U; LODHA, S
2008Nitride engineering and the effect of interfaces on charge trap flash performance and reliabilitySANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S