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DSpace at IIT Bombay >
Browsing by Author EISELE, I
Showing results 1 to 10 of 10
| Issue Date | Title | Author(s) | | 1997 | Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectrics | RAO, VR; HANSCH, W; BAUMGARTNER, H; EISELE, I; SHARMA, DK; VASI, J; GRABOLLA, T |
| 2001 | Comparison of sub-bandgap impact ionization in sub-100 nm conventional and lateral asymmetrical channel nMOSFETs | ANIL, K; MAHAPATRA, S; RAO, VR; EISELE, I |
| 2003 | A detailed experimental investigation of impact ionization in n-channel metal-oxide-semiconductor field-effect-transistors at very low drain voltages | ANIL, KG; MAHAPATRA, S; EISELE, I |
| 2000 | Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regime | ANIL, KG; MAHAPATRA, S; EISELE, I; RAMGOPAL RAO, V; VASI, J |
| 2002 | Electron-electron interaction signature peak in the substrate current versus gate voltage characteristics of n-channel silicon MOSFETs | ANIL, KG; MAHAPATRA, S; EISELE, I |
| 2001 | Experimental verification of the nature of the high energy tail in the electron energy distribution in n-channel MOSFETs | ANIL, KG; MAHAPATRA, S; EISELE, I |
| 1997 | High-field stressing of LPCVD gate oxides | RAMGOPAL RAO, V; EISELE, I; PATRIKAR, RM; SHARMA, DK; GRABOLLA, T; VASI, J |
| 1999 | Low temperature-high pressure grown thin gate dielectrics for MOS applications | RAMGOPAL RAO, V; MAHAPATRA, S; SHARMA, DK; VASI, J; GRABOLLA, T; EISELE, I; HANSCH, W |
| 2000 | Role of inversion layer quantization on sub-bandgap impact ionization in deep-sub-micron n-channel MOSFETs | ANIL, KG; MAHAPATRA, S; EISELE, I |
| 1997 | Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETs | RAMGOPAL RAO, V; HANSCH, W; EISELE, I |
Showing results 1 to 10 of 10
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