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Issue DateTitleAuthor(s)
2010Implications of fin width scaling on variability and reliability of high-k metal gate FinFETsCHABUKSWAR, S; MAJI, D; MANOJ, CR; ANIL, KG; RAO, VR; CRUPI, F; MAGNONE, P; GIUSI, G; PACE, C; COLLAERT, N
2013Part II: Investigation of Subthreshold Swing in Line Tunnel FETs Using Bias Stress MeasurementsWALKE, AM; VANDOOREN, A; KACZER, B; VERHULST, AS; ROOYACKERS, R; SIMOEN, E; HEYNS, MM; RAO, VR; GROESENEKEN, G; COLLAERT, N; THEAN, AVY
2013Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETsWALKE, AM; VERHULST, AS; VANDOOREN, A; VERRECK, D; SIMOEN, E; RAO, VR; GROESENEKEN, G; COLLAERT, N; THEAN, AVY
2007Reduction of the anomalous VT behavior in MOSFETs with high-kappa/metal gate stacksFERAIN, I; PANTISANO, L; KOTTANTHARAYIL, A; PETRY, J; TROJMAN, L; COLLAERT, N; JURCZAK, M; DE MEYER, K
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