|
|
DSpace at IIT Bombay >
Browsing by Author CHANDORKAR, AN
Showing results 1 to 20 of 46
| Issue Date | Title | Author(s) | | 1990 | ANALOGY BETWEEN ELECTRICAL AND STRUCTURAL-PROPERTIES OF ELECTRON-BEAM-DEPOSITED SNO2 | REDDY, MHM; JAWALEKAR, SR; CHANDORKAR, AN |
| 2004 | Built-in self-test technique for selective detection of neighbourhood pattern sensitive faults in memories | SABLE, RS; SARAF, RP; PAREKHJI, RA; CHANDORKAR, AN |
| 1995 | Capture cross-section of hole traps in reoxidized nitrided-oxide measured by irradiation | MALLIK, A; CHANDORKAR, AN; VASI, J |
| 1994 | Chemical treatment of photoluminescent porous silicon | VADJIKAR, RM; JAIN, B; GUPTA, PK; NANDEDKAR, RV; BHAWALKAR, DD; PATNI, MJ; SRINIVASA, R; CHANDORKAR, AN |
| 2009 | CMOS mixer design for cable modem RF tuner | KHERODIA, A; CHANDORKAR, AN |
| 1995 | COMPUTATIONAL MODELING OF NANOSTRUCTURED POROUS SILICON | VADJIKAR, RM; CHANDORKAR, AN; SHARMA, D; VENKATACHALAM, S |
| 1985 | DEPENDENCE OF PARTIAL-PRESSURE OF H2O ON PYROGENIC GROWTH OF SILICON DIOXIDE | CHANDORKAR, AN; KARULKAR, VT; RAMANATHAN, KV |
| 2004 | Design of amplifier with rail-to-rail CMR with 1V power supply | MITRA, SRINJOY; CHANDORKAR, AN |
| 2004 | Design of RF tuner for cable modem applications | BABU, VV; SETH, SUMANTRA; CHANDORKAR, AN |
| 1993 | DETERMINATION OF THE STOICHIOMETRY OF VANADIUM NITRIDE FILMS BY PROTON BACKSCATTERING | RAMANA, JV; RAJU, VS; RAY, AK; GANGADHARAN, S; SRINIVASA, RS; CHANDORKAR, AN |
| 2004 | Development of an abstract model for a non-volatile static random access memory | THARAKAN, KTO; CHANDORKAR, AN; RAO, SSSP |
| 1999 | E-beam deposited SnO2Pt-SnO2 and Pd-SnO2 thin films for LPG detection | REDDY, MHM; CHANDORKAR, AN |
| 1993 | EFFECT OF ANNEALING ON THE SURFACE AND INTERFACE PROPERTIES OF INDIUM OXIDE SILICON STRUCTURES | KOLLURI, SV; CHANDORKAR, AN |
| 1989 | THE EFFECT OF HEAT-TREATMENT ON THE STRUCTURAL-PROPERTIES OF ELECTRON-BEAM-EVAPORATED SNO2 FILMS | REDDY, MHM; JAWALEKAR, SR; CHANDORKAR, AN |
| 1991 | ELECTRICAL-PROPERTIES OF SILICON DIOXIDE FILMS GROWN BY INDUCTIVELY COUPLED RF PLASMA ANODIZATION | CHOKSI, AJ; LAL, R; CHANDORKAR, AN |
| 1989 | ELECTRON TRAPPING AND DETRAPPING IN THERMALLY NITRIDED SILICON DIOXIDE | RAMESH, K; CHANDORKAR, AN; VASI, J |
| 1993 | Electron trapping during irradiation in reoxidized nitrided oxide | CHANDORKAR, AN; MALLIK, A; VASI, J |
| 2008 | Estimation of process variation impact on DG-FinFET device performance using Plackett-Burman design of experiment method | CHANDORKAR, AN; MANDE, SUDHAKAR; IWAI, HIROSHI |
| 1997 | Formation and growth of porous silicon | VADJIKAR, RM; NATH, AK; CHANDORKAR, AN |
| 2002 | Growth and study of high-k Ta2O5 films deposited by Ta sputtering followed by its thermal oxidation | KRISHNAMOORTHI, P; CHANDORKAR, AN |
Showing results 1 to 20 of 46
|
