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Issue DateTitleAuthor(s)
2003Cold springs of the Barren Island, Andaman Sea, Indian OceanCHANDRASEKHARAM, D; VASELLI, O; CAPACCIONI, B; MANETTI, P; ALAM, MA
2010Comment on "thermoluminescence and optically stimulated luminescence signals from volcanic ash: history of volcanism in barren island, andaman sea" by d. Banerjee (quaternary geochronology)ALAM, MA; CHANDRASEKHARAM, D
2009A Common Framework of NBTI Generation and Recovery in Plasma-Nitrided SiON p-MOSFETsDEORA, S; MAHETA, VD; ISLAM, AE; ALAM, MA; MAHAPATRA, S
2013A compact analytical formalism for current transients in electrochemical systemsNAIR, PR; ALAM, MA
2013A Comparative Study of Different Physics-Based NBTI ModelsMAHAPATRA, S; GOEL, N; DESAI, S; GUPTA, S; JOSE, B; MUKHOPADHYAY, S; JOSHI, K; JAIN, A; ISLAM, AE; ALAM, MA
2007A comprehensive model for PMOS NBTI degradation: Recent progressALAM, MA; KUFLUOGLU, H; VARGHESE, D; MAHAPATRA, S
2005A comprehensive model of PMOS NBTI degradationALAM, MA; MAHAPATRA, S
2012Coupled Heterogeneous Nanowire-Nanoplate Planar Transistor Sensors for Giant (> 10 V/pH) Nernst ResponseGO, J; NAIR, PR; REDDY, B; DORVEL, B; BASHIR, R; ALAM, MA
2008Defect generation in p-MOSFETs under negative-bias stress: an experimental perspectiveMAHAPATRA, S; ALAM, MA
2005Hole energy dependent interface trap generation in MOSFET Si/SiO2 interfaceMAHAPATRA, S; VARGHESE, D; ALAM, MA
2005Impact of substrate bias on p-MOSFET negative bias temperature instabilityBHARATH KUMAR, P; DALEI, TR; VARGHESE, D; SAHA, D; MAHAPATRA, S; ALAM, MA
2004Investigation and modeling of interface and bulk trap generation during negative bias temperature instability of p-MOSFETsMAHAPATRA, S; BHARATH KUMAR, P; ALAM, MA
2009Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETsMAHAPATRA, S; MAHETA, VD; ISLAM, AE; ALAM, MA
2007Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) techniqueKUMAR, EN; MAHETA, VD; PURAWAT, S; ISLAM, AE; OLSEN, C; AHMED, K; ALAM, MA; MAHAPATRA, S
2009Material dependence of negative bias temperature instability (NBTI) stress and recovery in SiON p-MOSFETsMAHAPATRA, S; MAHETA, VD; DEORA, S; KUMAR, EN; PURAWAT, S; OLSEN, C; AHMED, K; ISLAM, AE; ALAM, MA
2004Mechanism of negative bias temperature instability in CMOS devices: degradation, recovery and impact of nitrogenMAHAPATRA, S; BHARATH KUMAR, P; DALEI, TR; SANA, D; ALAM, MA
2008Mobility degradation due to interface traps in plasma oxynitride PMOS devicesISLAM, AE; MAHETA, VD; DAS, H; MAHAPATRA, S; ALAM, MA
2003A new observation of enhanced bias temperature instability in thin gate oxide p-MOSFETsMAHAPATRA, S; BHARATH KUMAR, P; ALAM, MA
2010On the Nature of Shunt Leakage in Amorphous Silicon p-i-n Solar CellsDONGAONKAR, S; KARTHIK, Y; WANG, DP; FREI, M; MAHAPATRA, S; ALAM, MA
2007On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy?MAHAPATRA, S; AHMED, K; VARGHESE, D; ISLAM, AE; GUPTA, G; MADHAV, L; SAHA, D; ALAM, MA
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