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Issue DateTitleAuthor(s)
1999A study of 100 nm channel length asymmetric channel MOSFET by using charge pumpingMAHAPATRA, S; RAO, VR; PARIKH, CD; VASI, J; CHENG, B; WOO, JCS
2001A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping techniqueMAHAPATRA, S; RAO, VR; VASI, J; CHENG, B; WOO, JCS
2005Superior hot carrier reliability of single halo (SH) silicon-on-insulator (SOI) nMOSFET in analog applicationsVASI, J; NAJEEB-UD-DIN HAKIM; RAMGOPAL RAO, V; WOO, JCS
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