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DSpace at IIT Bombay >
Browsing by Author VASI, J
Showing results 67 to 86 of 94
| Issue Date | Title | Author(s) | | 2001 | Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs | MAHAPATRA, S; RAMGOPAL RAO, V; CHENG, B; KHARE, M; PARIKH, CD; WOO, JCS; VASI, J |
| 2001 | Performance optimization of 60 nm channel length vertical MOSFETs using channel engineering | SHRIVASTAV, G; MAHAPATRA, S; RAMGOPAL RAO, V; VASI, J |
| 1993 | POWER LAW MODEL FOR POSITIVE CHARGE BUILDUP IN SILICON DIOXIDE DUE TO HIGH-FIELD STRESSING | PATRIKAR, RM; LAL, R; VASI, J |
| 1991 | PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE | RAMESH, K; CHANDORKAR, AN; VASI, J |
| 1987 | PROFILING GENERATION LIFETIME IN AN MOS CAPACITOR USING A MULTISTEP CONSTANT-CAPACITANCE TECHNIQUE | LAL, R; VASI, J |
| 1996 | RADCAP: A MOS capacitor simulator for radiation effects | ZAMAN, P; PATRIKAR, SJ; GOEL, M; BHARADWAJ, V; DAS, A; SHARMA, DK; VASI, J |
| 1998 | Radiation-induced degradation of bipolar transistors | TOPKAR, A; MATHEW, T; LAL, R; VASI, J; NANVER, L |
| 1992 | RADIATION-INDUCED INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED SIO2 | RAO, VR; VASI, J |
| 2009 | Recent advances in charge trap flash memories | SANDHYA, C; SINGH, PK; GUPTA, S; ROHRA, H; SHIVATHEJA, M; GANGULY, U; HOFMANN, R; MUKHOPADHYAY, G; MAHAPATRA, S; VASI, J |
| 2003 | Reliability of ultrathin JVD silicon nitride MNSFETs under high field stressing | MANJULA RANI, KN; RAMGOPAL RAO, V; VASI, J |
| 2000 | Reliability studies on sub 100 nm SOI-MNSFETs | MAHAPATRA, S; RAMGOPAL RAO, V; VASI, J; CHENG, B; WOO, JCS |
| 1991 | Role of electron traps in the radiation hardness of thermally nitrided silicon dioxide | CHANDORKAR, AN; RAMESH, K; AGARWAL, A; VASI, J |
| 2005 | SEU reliability analysis of advanced deep-submicron transistors | VASI, J; JAIN, PALKESH; LAL, RAKESH |
| 1996 | Simulation of radiation effects in MOSFETs | EKBOTE, S; TAMBE, D; ZAMAN, P; DANGAT, HK; KHARE, M; SINHA, P; RODD, S; BUKHANWALA, N; VASI, J; SHARMA, DK; DAS, A |
| 1993 | A SIMULATION OF THE MULTIPLE-TRAPPING MODEL FOR CONTINUOUS-TIME RANDOM-WALK TRANSPORT | VASUDEVAN, V; VASI, J |
| 2004 | Single-event-induced barrier lowering in deep-submicron MOS devices and circuits | JAIN, PALKESH; VASI, J; LAL, RAKESH |
| 2003 | Small signal characteristics of thin film single halo SOI MOSFET for mixed mode applications | NAJEEB-UD-DIN HAKIM; RAMGOPAL RAO, V; VASI, J |
| 2004 | Stress voltage polarity dependence of JVD-Si3N4 MNSFET degradation | VASI, J; MANJULA RANI, KN; RAMGOPAL RAO, V |
| 1999 | A study of 100 nm channel length asymmetric channel MOSFET by using charge pumping | MAHAPATRA, S; RAO, VR; PARIKH, CD; VASI, J; CHENG, B; WOO, JCS |
| 2001 | A study of hot-carrier induced interface-trap profiles in lateral asymmetric channel MOSFETs using a novel charge pumping technique | MAHAPATRA, S; RAO, VR; VASI, J; CHENG, B; WOO, JCS |
Showing results 67 to 86 of 94
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