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DSpace at IIT Bombay >
Browsing by Author VASI, J
Showing results 44 to 63 of 94
| Issue Date | Title | Author(s) | | 2005 | Look-up table approach for RF circuit simulation using a novel measurement technique | AGARWAL, SN; JHA, ANURANJAN; VINAY KUMAR, D; VASI, J; PATIL, MB; RUSTAGI, SC |
| 1998 | Low dose radiation sensor for medical therapy applications | ANIL, KG; VASI, J; LAL, R |
| 1999 | Low temperature-high pressure grown thin gate dielectrics for MOS applications | RAMGOPAL RAO, V; MAHAPATRA, S; SHARMA, DK; VASI, J; GRABOLLA, T; EISELE, I; HANSCH, W |
| 2005 | Mechanism of drain disturb in SONOS flash EEPROMs | BHARATH KUMAR, P; SHARMA, RAVINDER; NAIR, PR; NAIR, DR; KAMOHARA, S; MAHAPATRA, S; VASI, J |
| 1987 | MODELING OF A DEPLETION-MODE MOSFET | PARIKH, CD; VASI, J |
| 1988 | Modeling of a depletion-mode mosfet - response | PARIKH, CD; VASI, J |
| 1996 | Modelling and characterization of commercial CMOS IC's under radiation | SHANWARE, A; GODAMBE, N; VASI, J; CHANDORKAR, A; DAS, A |
| 1998 | A Monte Carlo approach for incorporation of memory effect in switched gate bias experiments | SUBBARAMAN, S; SHARMA, DK; VASI, J; DAS, A |
| 1993 | THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICS | MALLIK, A; VASI, J; CHANDORKAR, AN |
| 1993 | Net positive-charge buildup in various MOS insulators due to high-field stressing | VASI, J; PATRIKAR, RM; LAL, RAKESH |
| 1996 | Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics | RAMGOPAL RAO, V; SHARMA, DK; VASI, J |
| 1996 | Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics | RAO, VR; SHARMA, DK; VASI, J |
| 2003 | A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: small-signal analysis | ROY, AS; VASI, J; PATIL, MB |
| 2003 | A new approach to model nonquasi-static (NQS) effects for MOSFETs - Part I: large-signal analysis | ROY, AS; VASI, J; PATIL, MB |
| 2003 | A new method to characterize border traps in submicron transistors using hysteresis in the drain current | RAMGOPAL RAO, V; MANJULA RANI, KN; VASI, J |
| 1999 | A new "multifrequency" charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's | MAHAPATRA, S; PARIKH, CD; VASI, J |
| 1999 | A new “multifrequency” charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's | MAHAPATRA, S; PARIKH, CD; VASI, J |
| 1998 | A new technique to profile hot-carrier induced interface state generation in nMOSFETs using charge pumping | MAHAPATRA, S; PARIKH, CD; VASI, J |
| 2008 | Nitride engineering and the effect of interfaces on charge trap flash performance and reliability | SANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2004 | A novel method to obtain 3-port network parameters from 2-port measurements | JHA, ANURANJAN; VASI, J; RUSTAGI, SC; PATIL, MB |
Showing results 44 to 63 of 94
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