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Browsing by Author VASI, J

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Issue DateTitleAuthor(s)
2009Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under (FN/FN) OperationSANDHYA, C; OAK, AB; CHATTAR, N; JOSHI, AS; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
2009An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETsHARIHARAN, V; VASI, J; RAO, VR
2009Influence of SiN composition on program and erase characteristics of SANOS-type flash memoriesSANDHYA, C; GANGULY, U; APOORVA, B; OLSEN, C; SEUTTER, S; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
1989An interface reaction-mechanism for the dry oxidation of siliconMOHARIR, SS; CHANDORKAR, AN; VASI, J
1995INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDESPATRIKAR, RM; LAL, R; VASI, J
1992Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitorsVASI, J; BHAT, N
2000Ionizing-radiation induced degradation of SiGeHBTsTOPKAR, A; LODHA, S; MAHFOOZ, AT; VASI, J; LAL, R; NANVER, L
2005Look-up table approach for RF circuit simulation using a novel measurement techniqueAGARWAL, SN; JHA, ANURANJAN; VINAY KUMAR, D; VASI, J; PATIL, MB; RUSTAGI, SC
1998Low dose radiation sensor for medical therapy applicationsANIL, KG; VASI, J; LAL, R
1999Low temperature-high pressure grown thin gate dielectrics for MOS applicationsRAMGOPAL RAO, V; MAHAPATRA, S; SHARMA, DK; VASI, J; GRABOLLA, T; EISELE, I; HANSCH, W
2005Mechanism of drain disturb in SONOS flash EEPROMsBHARATH KUMAR, P; SHARMA, RAVINDER; NAIR, PR; NAIR, DR; KAMOHARA, S; MAHAPATRA, S; VASI, J
1987MODELING OF A DEPLETION-MODE MOSFETPARIKH, CD; VASI, J
1988Modeling of a depletion-mode mosfet - responsePARIKH, CD; VASI, J
1996Modelling and characterization of commercial CMOS IC's under radiationSHANWARE, A; GODAMBE, N; VASI, J; CHANDORKAR, A; DAS, A
1998A Monte Carlo approach for incorporation of memory effect in switched gate bias experimentsSUBBARAMAN, S; SHARMA, DK; VASI, J; DAS, A
1993THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICSMALLIK, A; VASI, J; CHANDORKAR, AN
1993Net positive-charge buildup in various MOS insulators due to high-field stressingVASI, J; PATRIKAR, RM; LAL, RAKESH
1996Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectricsRAO, VR; SHARMA, DK; VASI, J
1996Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectricsRAMGOPAL RAO, V; SHARMA, DK; VASI, J
2003A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: small-signal analysisROY, AS; VASI, J; PATIL, MB
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