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DSpace at IIT Bombay >
Browsing by Author VASI, J
Showing results 12 to 31 of 94
| Issue Date | Title | Author(s) | | 1993 | DEGRADATION OF OXIDES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS UNDER HIGH-FIELD STRESS | PATRIKAR, RM; LAL, R; VASI, J |
| 2002 | Degradation study of ultra-thin JVD silicon nitride MNSFETs | MANJULARANI, KN; RAO, VR; VASI, J |
| 2005 | Design of a 0.1 mu m single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applications | HAKIM, NUD; RAO, VR; VASI, J |
| 2007 | Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation | NAINANI, A; PALIT, S; SINGH, PK; GANGULY, U; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2001 | Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressing | KHAMESRA, A; LAL, RAKESH; VASI, J; AKUMAR, KP; SIN, KO |
| 2000 | Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs | MAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J |
| 1998 | Device simulation for radiation and hot carrier effects | SHARMA, DK; EKBOTE, S; ZAMAN, P; SUBBARAMAN, S; DAS, A; VASI, J |
| 1999 | A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs | MAHAPATRA, S; PARIKH, CD; VASI, J; RAMGOPAL RAO, V; VISWANATHAN, CR |
| 1995 | DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELD | TALWALKAR, N; DAS, A; VASI, J |
| 2000 | Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regime | ANIL, KG; MAHAPATRA, S; EISELE, I; RAMGOPAL RAO, V; VASI, J |
| 2009 | Drain current model for nanoscale double-gate MOSFETs | HARIHARAN, V; THAKKER, R; SINGH, K; SACHID, AB; PATIL, MB; VASI, J; RAO, VR |
| 2007 | Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2 | HARIHARAN, V; VASI, J; RAO, VR |
| 2008 | Drain current model including velocity saturation for symmetric double-gate MOSFETs | VENKATNARAYAN, HARIHARAN; VASI, J; RAMGOPAL RAO, V |
| 2008 | The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash | SANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 1989 | ELECTRON TRAPPING AND DETRAPPING IN THERMALLY NITRIDED SILICON DIOXIDE | RAMESH, K; CHANDORKAR, AN; VASI, J |
| 1993 | Electron trapping during irradiation in reoxidized nitrided oxide | CHANDORKAR, AN; MALLIK, A; VASI, J |
| 1982 | ELECTRON TRAPS IN SIO2 GROWN IN THE PRESENCE OF TRICHLOROETHYLENE | BHATTACHARYYA, AB; MANCHANDA, L; VASI, J |
| 2007 | Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memories | NAINANI, ANEESH; ROY, ARUNASHU; SINGH, PK; MUKHOPADHYAY, GAUTAM; VASI, J |
| 1982 | FEED FORWARD DUE TO BARRIER MODULATION IN CHARGE-COUPLED-DEVICES | MADAN, SK; MATHUR, B; VASI, J |
| 1993 | HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION | PATRIKAR, RM; LAL, R; VASI, J |
Showing results 12 to 31 of 94
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