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Browsing by Author VASI, J
Showing results 4 to 23 of 97
Issue Date  Title  Author(s)  2009  A CADcompatible closed form approximation for the inversion charge areal density in doublegate MOSFETs  HARIHARAN, V; VASI, J; RAO, VR 
1995  Capture crosssection of hole traps in reoxidized nitridedoxide measured by irradiation  MALLIK, A; CHANDORKAR, AN; VASI, J 
1993  Carrier mobility degradation in metaloxidesemiconductor fieldeffect transistors due to oxide charge  PHANSE, A; SHARMA, D; MALLIK, A; VASI, J 
2002  Characterization and simulation of lateral asymmetric channel silicononinsulator MOSFETs  NAJEEBUDDIN; RAO, VR; VASI, J 
2001  Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETs  NAJEEBUDDIN HAKIM; DUNGA, MV; AATISH KUMAR; RAMGOPAL RAO, V; VASI, J 
1997  Charge trapping behaviour in deposited and grown thin metaloxidesemiconductor gate dielectrics  RAO, VR; HANSCH, W; BAUMGARTNER, H; EISELE, I; SHARMA, DK; VASI, J; GRABOLLA, T 
2008  Closed form current and conductance model for symmetric doublegate MOSFETs using fielddependent mobility and body doping  HARIHARAN, V; THAKKER, R; PATIL, MB; VASI, J; RAO, VR 
2000  A comprehensive study of hotcarrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique  MAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J 
1993  DEGRADATION OF OXIDES IN METALOXIDESEMICONDUCTOR CAPACITORS UNDER HIGHFIELD STRESS  PATRIKAR, RM; LAL, R; VASI, J 
2002  Degradation study of ultrathin JVD silicon nitride MNSFETs  MANJULARANI, KN; RAO, VR; VASI, J 
2005  Design of a 0.1 mu m single halo (SH) thin film silicononinsulator (SOI) MOSFET for analogue applications  HAKIM, NUD; RAO, VR; VASI, J 
2007  Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation  NAINANI, A; PALIT, S; SINGH, PK; GANGULY, U; KRISHNA, N; VASI, J; MAHAPATRA, S 
2001  Device degradation of nchannel polySi TFTs due to highfield, hotcarrier and radiation stressing  KHAMESRA, A; LAL, RAKESH; VASI, J; AKUMAR, KP; SIN, KO 
2000  Device scaling effects on hotcarrier induced interface and oxidetrapped charge distributions in MOSFETs  MAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J 
1998  Device simulation for radiation and hot carrier effects  SHARMA, DK; EKBOTE, S; ZAMAN, P; SUBBARAMAN, S; DAS, A; VASI, J 
1999  A direct charge pumping technique for spatial profiling of hotcarrier induced interface and oxide traps in MOSFETs  MAHAPATRA, S; PARIKH, CD; VASI, J; RAMGOPAL RAO, V; VISWANATHAN, CR 
1995  DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRICFIELD  TALWALKAR, N; DAS, A; VASI, J 
2000  Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regime  ANIL, KG; MAHAPATRA, S; EISELE, I; RAMGOPAL RAO, V; VASI, J 
2009  Drain current model for nanoscale doublegate MOSFETs  HARIHARAN, V; THAKKER, R; SINGH, K; SACHID, AB; PATIL, MB; VASI, J; RAO, VR 
2007  Drain current model for undoped symmetric doublegate FETs using a velocity saturation model with exponent n=2  HARIHARAN, V; VASI, J; RAO, VR 
Showing results 4 to 23 of 97
