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Browsing by Author VASI, J

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Issue DateTitleAuthor(s)
2013Optical Bandgap Tunability of Silicon Nanocrystals Fabricated by Inductively Coupled Plasma CVD for Next Generation PhotovoltaicsMAVILLA, NR; SOLANKI, CS; VASI, J
2000Optimization and realization of sub 100nm channel length lateral asymmetric channel P-MOSFETSHEMKAR, M; VASI, J; RAO, VR; CHENG, B; WOO, JCS
2002Optimization and realization of sub-100-nm channel length single halo p-MOSFETsRAMGOPAL RAO, V; BORSE, DG; MANJULA RANI, KN; JHA, NEERAJ K; CHANDORKAR, AN; VASI, J; CHENG, B; WOO, JCS
2001Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETsMAHAPATRA, S; RAMGOPAL RAO, V; CHENG, B; KHARE, M; PARIKH, CD; WOO, JCS; VASI, J
2001Performance optimization of 60 nm channel length vertical MOSFETs using channel engineeringSHRIVASTAV, G; MAHAPATRA, S; RAMGOPAL RAO, V; VASI, J
1993POWER LAW MODEL FOR POSITIVE CHARGE BUILDUP IN SILICON DIOXIDE DUE TO HIGH-FIELD STRESSINGPATRIKAR, RM; LAL, R; VASI, J
1991PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDERAMESH, K; CHANDORKAR, AN; VASI, J
1987PROFILING GENERATION LIFETIME IN AN MOS CAPACITOR USING A MULTISTEP CONSTANT-CAPACITANCE TECHNIQUELAL, R; VASI, J
1996RADCAP: A MOS capacitor simulator for radiation effectsZAMAN, P; PATRIKAR, SJ; GOEL, M; BHARADWAJ, V; DAS, A; SHARMA, DK; VASI, J
1998Radiation-induced degradation of bipolar transistorsTOPKAR, A; MATHEW, T; LAL, R; VASI, J; NANVER, L
1992RADIATION-INDUCED INTERFACE-STATE GENERATION IN REOXIDIZED NITRIDED SIO2RAO, VR; VASI, J
2013Raman spectroscopy of silicon-nanocrystals fabricated by inductively coupled plasma chemical vapor depositionMAVILLA, NR; SOLANKI, CS; VASI, J
2009Recent advances in charge trap flash memoriesSANDHYA, C; SINGH, PK; GUPTA, S; ROHRA, H; SHIVATHEJA, M; GANGULY, U; HOFMANN, R; MUKHOPADHYAY, G; MAHAPATRA, S; VASI, J
2003Reliability of ultrathin JVD silicon nitride MNSFETs under high field stressingMANJULA RANI, KN; RAMGOPAL RAO, V; VASI, J
2000Reliability studies on sub 100 nm SOI-MNSFETsMAHAPATRA, S; RAMGOPAL RAO, V; VASI, J; CHENG, B; WOO, JCS
1991Role of electron traps in the radiation hardness of thermally nitrided silicon dioxideCHANDORKAR, AN; RAMESH, K; AGARWAL, A; VASI, J
2005SEU reliability analysis of advanced deep-submicron transistorsVASI, J; JAIN, PALKESH; LAL, RAKESH
1996Simulation of radiation effects in MOSFETsEKBOTE, S; TAMBE, D; ZAMAN, P; DANGAT, HK; KHARE, M; SINHA, P; RODD, S; BUKHANWALA, N; VASI, J; SHARMA, DK; DAS, A
1993A SIMULATION OF THE MULTIPLE-TRAPPING MODEL FOR CONTINUOUS-TIME RANDOM-WALK TRANSPORTVASUDEVAN, V; VASI, J
2004Single-event-induced barrier lowering in deep-submicron MOS devices and circuitsJAIN, PALKESH; VASI, J; LAL, RAKESH
Showing results 65 to 84 of 96
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