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DSpace at IIT Bombay >
Browsing by Author VASI, J
Showing results 54 to 73 of 94
| Issue Date | Title | Author(s) | | 1996 | Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics | RAMGOPAL RAO, V; SHARMA, DK; VASI, J |
| 1996 | Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectrics | RAO, VR; SHARMA, DK; VASI, J |
| 2003 | A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: small-signal analysis | ROY, AS; VASI, J; PATIL, MB |
| 2003 | A new approach to model nonquasi-static (NQS) effects for MOSFETs - Part I: large-signal analysis | ROY, AS; VASI, J; PATIL, MB |
| 2003 | A new method to characterize border traps in submicron transistors using hysteresis in the drain current | RAMGOPAL RAO, V; MANJULA RANI, KN; VASI, J |
| 1999 | A new "multifrequency" charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's | MAHAPATRA, S; PARIKH, CD; VASI, J |
| 1999 | A new “multifrequency” charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's | MAHAPATRA, S; PARIKH, CD; VASI, J |
| 1998 | A new technique to profile hot-carrier induced interface state generation in nMOSFETs using charge pumping | MAHAPATRA, S; PARIKH, CD; VASI, J |
| 2008 | Nitride engineering and the effect of interfaces on charge trap flash performance and reliability | SANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2004 | A novel method to obtain 3-port network parameters from 2-port measurements | JHA, ANURANJAN; VASI, J; RUSTAGI, SC; PATIL, MB |
| 1991 | A NUMERICAL-SIMULATION OF HOLE AND ELECTRON TRAPPING DUE TO RADIATION IN SILICON DIOXIDE | VASUDEVAN, V; VASI, J |
| 2000 | Optimization and realization of sub 100nm channel length lateral asymmetric channel P-MOSFETS | HEMKAR, M; VASI, J; RAO, VR; CHENG, B; WOO, JCS |
| 2002 | Optimization and realization of sub-100-nm channel length single halo p-MOSFETs | RAMGOPAL RAO, V; BORSE, DG; MANJULA RANI, KN; JHA, NEERAJ K; CHANDORKAR, AN; VASI, J; CHENG, B; WOO, JCS |
| 2001 | Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs | MAHAPATRA, S; RAMGOPAL RAO, V; CHENG, B; KHARE, M; PARIKH, CD; WOO, JCS; VASI, J |
| 2001 | Performance optimization of 60 nm channel length vertical MOSFETs using channel engineering | SHRIVASTAV, G; MAHAPATRA, S; RAMGOPAL RAO, V; VASI, J |
| 1993 | POWER LAW MODEL FOR POSITIVE CHARGE BUILDUP IN SILICON DIOXIDE DUE TO HIGH-FIELD STRESSING | PATRIKAR, RM; LAL, R; VASI, J |
| 1991 | PROCESS DEPENDENCE OF BREAKDOWN FIELD IN THERMALLY NITRIDED SILICON DIOXIDE | RAMESH, K; CHANDORKAR, AN; VASI, J |
| 1987 | PROFILING GENERATION LIFETIME IN AN MOS CAPACITOR USING A MULTISTEP CONSTANT-CAPACITANCE TECHNIQUE | LAL, R; VASI, J |
| 1996 | RADCAP: A MOS capacitor simulator for radiation effects | ZAMAN, P; PATRIKAR, SJ; GOEL, M; BHARADWAJ, V; DAS, A; SHARMA, DK; VASI, J |
| 1998 | Radiation-induced degradation of bipolar transistors | TOPKAR, A; MATHEW, T; LAL, R; VASI, J; NANVER, L |
Showing results 54 to 73 of 94
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