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Browsing by Author VASI, J

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Issue DateTitleAuthor(s)
1998Low dose radiation sensor for medical therapy applicationsANIL, KG; VASI, J; LAL, R
1999Low temperature-high pressure grown thin gate dielectrics for MOS applicationsRAMGOPAL RAO, V; MAHAPATRA, S; SHARMA, DK; VASI, J; GRABOLLA, T; EISELE, I; HANSCH, W
2005Mechanism of drain disturb in SONOS flash EEPROMsBHARATH KUMAR, P; SHARMA, RAVINDER; NAIR, PR; NAIR, DR; KAMOHARA, S; MAHAPATRA, S; VASI, J
1987MODELING OF A DEPLETION-MODE MOSFETPARIKH, CD; VASI, J
1988Modeling of a depletion-mode mosfet - responsePARIKH, CD; VASI, J
1996Modelling and characterization of commercial CMOS IC's under radiationSHANWARE, A; GODAMBE, N; VASI, J; CHANDORKAR, A; DAS, A
1998A Monte Carlo approach for incorporation of memory effect in switched gate bias experimentsSUBBARAMAN, S; SHARMA, DK; VASI, J; DAS, A
1993THE NATURE OF THE HOLE TRAPS IN REOXIDIZED NITRIDED-OXIDE GATE DIELECTRICSMALLIK, A; VASI, J; CHANDORKAR, AN
1993Net positive-charge buildup in various MOS insulators due to high-field stressingVASI, J; PATRIKAR, RM; LAL, RAKESH
1996Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectricsRAO, VR; SHARMA, DK; VASI, J
1996Neutral electron trap generation under irradiation in reoxidized nitrided gate dielectricsRAMGOPAL RAO, V; SHARMA, DK; VASI, J
2003A new approach to model nonquasi-static (NQS) effects for MOSFETs. Part II: small-signal analysisROY, AS; VASI, J; PATIL, MB
2003A new approach to model nonquasi-static (NQS) effects for MOSFETs - Part I: large-signal analysisROY, AS; VASI, J; PATIL, MB
2003A new method to characterize border traps in submicron transistors using hysteresis in the drain currentRAMGOPAL RAO, V; MANJULA RANI, KN; VASI, J
1999A new "multifrequency" charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET'sMAHAPATRA, S; PARIKH, CD; VASI, J
1999A new “multifrequency” charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET'sMAHAPATRA, S; PARIKH, CD; VASI, J
1998A new technique to profile hot-carrier induced interface state generation in nMOSFETs using charge pumpingMAHAPATRA, S; PARIKH, CD; VASI, J
2008Nitride engineering and the effect of interfaces on charge trap flash performance and reliabilitySANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S
2004A novel method to obtain 3-port network parameters from 2-port measurementsJHA, ANURANJAN; VASI, J; RUSTAGI, SC; PATIL, MB
1991A NUMERICAL-SIMULATION OF HOLE AND ELECTRON TRAPPING DUE TO RADIATION IN SILICON DIOXIDEVASUDEVAN, V; VASI, J
Showing results 45 to 64 of 96
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