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Browsing by Author VASI, J

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Issue DateTitleAuthor(s)
2007Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2HARIHARAN, V; VASI, J; RAO, VR
2008Drain current model including velocity saturation for symmetric double-gate MOSFETsVENKATNARAYAN, HARIHARAN; VASI, J; RAMGOPAL RAO, V
2008The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flashSANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S
1989ELECTRON TRAPPING AND DETRAPPING IN THERMALLY NITRIDED SILICON DIOXIDERAMESH, K; CHANDORKAR, AN; VASI, J
1993Electron trapping during irradiation in reoxidized nitrided oxideCHANDORKAR, AN; MALLIK, A; VASI, J
1982ELECTRON TRAPS IN SIO2 GROWN IN THE PRESENCE OF TRICHLOROETHYLENEBHATTACHARYYA, AB; MANCHANDA, L; VASI, J
2007Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memoriesNAINANI, ANEESH; ROY, ARUNASHU; SINGH, PK; MUKHOPADHYAY, GAUTAM; VASI, J
1982FEED FORWARD DUE TO BARRIER MODULATION IN CHARGE-COUPLED-DEVICESMADAN, SK; MATHUR, B; VASI, J
1993HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSIONPATRIKAR, RM; LAL, R; VASI, J
2002High field stressing effects in JVD nitride capacitorsMANJULARANI, KN; RAO, VR; VASI, J
1997High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processingSUBRAHMANYAM, PVS; PRABHAKAR, A; VASI, J
1997High-field stressing of LPCVD gate oxidesRAMGOPAL RAO, V; EISELE, I; PATRIKAR, RM; SHARMA, DK; GRABOLLA, T; VASI, J
1999Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping techniqueMAHAPATRA, S; RAMGOPAL RAO, V; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS
1998HOTMOS : a 2-D MOS device simulator for hot carrier effectsSUBBARAMAN, S; SHARMA, DK; VASI, J; DAS, A
2009Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under (FN/FN) OperationSANDHYA, C; OAK, AB; CHATTAR, N; JOSHI, AS; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
2009An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETsHARIHARAN, V; VASI, J; RAO, VR
2009Influence of SiN composition on program and erase characteristics of SANOS-type flash memoriesSANDHYA, C; GANGULY, U; APOORVA, B; OLSEN, C; SEUTTER, S; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S
1989An interface reaction-mechanism for the dry oxidation of siliconMOHARIR, SS; CHANDORKAR, AN; VASI, J
1995INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDESPATRIKAR, RM; LAL, R; VASI, J
1992Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitorsVASI, J; BHAT, N
Showing results 23 to 42 of 94
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