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DSpace at IIT Bombay >
Browsing by Author VASI, J
Showing results 23 to 42 of 94
| Issue Date | Title | Author(s) | | 2007 | Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2 | HARIHARAN, V; VASI, J; RAO, VR |
| 2008 | Drain current model including velocity saturation for symmetric double-gate MOSFETs | VENKATNARAYAN, HARIHARAN; VASI, J; RAMGOPAL RAO, V |
| 2008 | The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash | SANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 1989 | ELECTRON TRAPPING AND DETRAPPING IN THERMALLY NITRIDED SILICON DIOXIDE | RAMESH, K; CHANDORKAR, AN; VASI, J |
| 1993 | Electron trapping during irradiation in reoxidized nitrided oxide | CHANDORKAR, AN; MALLIK, A; VASI, J |
| 1982 | ELECTRON TRAPS IN SIO2 GROWN IN THE PRESENCE OF TRICHLOROETHYLENE | BHATTACHARYYA, AB; MANCHANDA, L; VASI, J |
| 2007 | Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memories | NAINANI, ANEESH; ROY, ARUNASHU; SINGH, PK; MUKHOPADHYAY, GAUTAM; VASI, J |
| 1982 | FEED FORWARD DUE TO BARRIER MODULATION IN CHARGE-COUPLED-DEVICES | MADAN, SK; MATHUR, B; VASI, J |
| 1993 | HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSION | PATRIKAR, RM; LAL, R; VASI, J |
| 2002 | High field stressing effects in JVD nitride capacitors | MANJULARANI, KN; RAO, VR; VASI, J |
| 1997 | High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processing | SUBRAHMANYAM, PVS; PRABHAKAR, A; VASI, J |
| 1997 | High-field stressing of LPCVD gate oxides | RAMGOPAL RAO, V; EISELE, I; PATRIKAR, RM; SHARMA, DK; GRABOLLA, T; VASI, J |
| 1999 | Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping technique | MAHAPATRA, S; RAMGOPAL RAO, V; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS |
| 1998 | HOTMOS : a 2-D MOS device simulator for hot carrier effects | SUBBARAMAN, S; SHARMA, DK; VASI, J; DAS, A |
| 2009 | Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under (FN/FN) Operation | SANDHYA, C; OAK, AB; CHATTAR, N; JOSHI, AS; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S |
| 2009 | An Improvement to the Numerical Robustness of the Surface Potential Approximation for Double-Gate MOSFETs | HARIHARAN, V; VASI, J; RAO, VR |
| 2009 | Influence of SiN composition on program and erase characteristics of SANOS-type flash memories | SANDHYA, C; GANGULY, U; APOORVA, B; OLSEN, C; SEUTTER, S; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S |
| 1989 | An interface reaction-mechanism for the dry oxidation of silicon | MOHARIR, SS; CHANDORKAR, AN; VASI, J |
| 1995 | INTERFACE STATE GENERATION DUE TO HIGH-FIELD STRESSING IN MOS OXIDES | PATRIKAR, RM; LAL, R; VASI, J |
| 1992 | Interface-state generation under radiation and high-field stressing in reoxidized nitrided oxide MOS capacitors | VASI, J; BHAT, N |
Showing results 23 to 42 of 94
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