DSpace
 

DSpace at IIT Bombay >

Browsing by Author VASI, J

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:   
Sort by: In order: Results/Page Authors/Record:
Showing results 17 to 36 of 96
< previous   next >
Issue DateTitleAuthor(s)
2000Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETsMAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J
1998Device simulation for radiation and hot carrier effectsSHARMA, DK; EKBOTE, S; ZAMAN, P; SUBBARAMAN, S; DAS, A; VASI, J
1999A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETsMAHAPATRA, S; PARIKH, CD; VASI, J; RAMGOPAL RAO, V; VISWANATHAN, CR
1995DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELDTALWALKAR, N; DAS, A; VASI, J
2000Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regimeANIL, KG; MAHAPATRA, S; EISELE, I; RAMGOPAL RAO, V; VASI, J
2009Drain current model for nanoscale double-gate MOSFETsHARIHARAN, V; THAKKER, R; SINGH, K; SACHID, AB; PATIL, MB; VASI, J; RAO, VR
2007Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2HARIHARAN, V; VASI, J; RAO, VR
2008Drain current model including velocity saturation for symmetric double-gate MOSFETsVENKATNARAYAN, HARIHARAN; VASI, J; RAMGOPAL RAO, V
2008The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flashSANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S
1989ELECTRON TRAPPING AND DETRAPPING IN THERMALLY NITRIDED SILICON DIOXIDERAMESH, K; CHANDORKAR, AN; VASI, J
1993Electron trapping during irradiation in reoxidized nitrided oxideCHANDORKAR, AN; MALLIK, A; VASI, J
1982ELECTRON TRAPS IN SIO2 GROWN IN THE PRESENCE OF TRICHLOROETHYLENEBHATTACHARYYA, AB; MANCHANDA, L; VASI, J
2007Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memoriesNAINANI, ANEESH; ROY, ARUNASHU; SINGH, PK; MUKHOPADHYAY, GAUTAM; VASI, J
1982FEED FORWARD DUE TO BARRIER MODULATION IN CHARGE-COUPLED-DEVICESMADAN, SK; MATHUR, B; VASI, J
1993HIGH-FIELD CHARACTERISTICS OF METAL-OXIDE-SEMICONDUCTOR CAPACITORS WITH THE SILICON IN INVERSIONPATRIKAR, RM; LAL, R; VASI, J
2002High field stressing effects in JVD nitride capacitorsMANJULARANI, KN; RAO, VR; VASI, J
1997High field stressing effects on the split N2O grown thin gate dielectric by rapid thermal processingSUBRAHMANYAM, PVS; PRABHAKAR, A; VASI, J
1997High-field stressing of LPCVD gate oxidesRAMGOPAL RAO, V; EISELE, I; PATRIKAR, RM; SHARMA, DK; GRABOLLA, T; VASI, J
1999Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping techniqueMAHAPATRA, S; RAMGOPAL RAO, V; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS
1998HOTMOS : a 2-D MOS device simulator for hot carrier effectsSUBBARAMAN, S; SHARMA, DK; VASI, J; DAS, A
Showing results 17 to 36 of 96
< previous   next >

 

Valid XHTML 1.0! DSpace Software Copyright © 2002-2010  Duraspace - Feedback