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Browsing by Author VASI, J

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Issue DateTitleAuthor(s)
2000A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping techniqueMAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J
1993DEGRADATION OF OXIDES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS UNDER HIGH-FIELD STRESSPATRIKAR, RM; LAL, R; VASI, J
2002Degradation study of ultra-thin JVD silicon nitride MNSFETsMANJULARANI, KN; RAO, VR; VASI, J
2005Design of a 0.1 mu m single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applicationsHAKIM, NUD; RAO, VR; VASI, J
2007Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operationNAINANI, A; PALIT, S; SINGH, PK; GANGULY, U; KRISHNA, N; VASI, J; MAHAPATRA, S
2001Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressingKHAMESRA, A; LAL, RAKESH; VASI, J; AKUMAR, KP; SIN, KO
2000Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETsMAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J
1998Device simulation for radiation and hot carrier effectsSHARMA, DK; EKBOTE, S; ZAMAN, P; SUBBARAMAN, S; DAS, A; VASI, J
1999A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETsMAHAPATRA, S; PARIKH, CD; VASI, J; RAMGOPAL RAO, V; VISWANATHAN, CR
1995DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELDTALWALKAR, N; DAS, A; VASI, J
2000Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regimeANIL, KG; MAHAPATRA, S; EISELE, I; RAMGOPAL RAO, V; VASI, J
2009Drain current model for nanoscale double-gate MOSFETsHARIHARAN, V; THAKKER, R; SINGH, K; SACHID, AB; PATIL, MB; VASI, J; RAO, VR
2007Drain current model for undoped symmetric double-gate FETs using a velocity saturation model with exponent n=2HARIHARAN, V; VASI, J; RAO, VR
2008Drain current model including velocity saturation for symmetric double-gate MOSFETsVENKATNARAYAN, HARIHARAN; VASI, J; RAMGOPAL RAO, V
2008The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flashSANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S
1989ELECTRON TRAPPING AND DETRAPPING IN THERMALLY NITRIDED SILICON DIOXIDERAMESH, K; CHANDORKAR, AN; VASI, J
1993Electron trapping during irradiation in reoxidized nitrided oxideCHANDORKAR, AN; MALLIK, A; VASI, J
1982ELECTRON TRAPS IN SIO2 GROWN IN THE PRESENCE OF TRICHLOROETHYLENEBHATTACHARYYA, AB; MANCHANDA, L; VASI, J
2007Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memoriesNAINANI, ANEESH; ROY, ARUNASHU; SINGH, PK; MUKHOPADHYAY, GAUTAM; VASI, J
1982FEED FORWARD DUE TO BARRIER MODULATION IN CHARGE-COUPLED-DEVICESMADAN, SK; MATHUR, B; VASI, J
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