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Browsing by Author VASI, J

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Issue DateTitleAuthor(s)
1999100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectricMAHAPATRA, S; RAMGOPAL RAO, V; MANJULA RANI, KN; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS
1994A 2-DIMENSIONAL NUMERICAL-SIMULATION OF OXIDE CHARGE BUILDUP IN MOS-TRANSISTORS DUE TO RADIATIONVASUDEVAN, V; VASI, J
2002Analysis of floating body effects in thin film conventional and single pocket SOI MOSFETs using the GIDL current techniqueRAMGOPAL RAO, V; NAJEEB-UD-DIN HAKIM; DUNGA, MV; AATISH KUMAR; VASI, J; CHENG, B; WOO, JCS
2009A CAD-compatible closed form approximation for the inversion charge areal density in double-gate MOSFETsHARIHARAN, V; VASI, J; RAO, VR
1995Capture cross-section of hole traps in reoxidized nitrided-oxide measured by irradiationMALLIK, A; CHANDORKAR, AN; VASI, J
1993Carrier mobility degradation in metal-oxide-semiconductor field-effect transistors due to oxide chargePHANSE, A; SHARMA, D; MALLIK, A; VASI, J
2002Characterization and simulation of lateral asymmetric channel silicon-on-insulator MOSFETsNAJEEB-UD-DIN; RAO, VR; VASI, J
2001Characterization of lateral asymmetric channel (LAC) thin film SOI MOSFETsNAJEEB-UD-DIN HAKIM; DUNGA, MV; AATISH KUMAR; RAMGOPAL RAO, V; VASI, J
1997Charge trapping behaviour in deposited and grown thin metal-oxide-semiconductor gate dielectricsRAO, VR; HANSCH, W; BAUMGARTNER, H; EISELE, I; SHARMA, DK; VASI, J; GRABOLLA, T
2008Closed form current and conductance model for symmetric double-gate MOSFETs using field-dependent mobility and body dopingHARIHARAN, V; THAKKER, R; PATIL, MB; VASI, J; RAO, VR
2000A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping techniqueMAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J
1993DEGRADATION OF OXIDES IN METAL-OXIDE-SEMICONDUCTOR CAPACITORS UNDER HIGH-FIELD STRESSPATRIKAR, RM; LAL, R; VASI, J
2002Degradation study of ultra-thin JVD silicon nitride MNSFETsMANJULARANI, KN; RAO, VR; VASI, J
2005Design of a 0.1 mu m single halo (SH) thin film silicon-on-insulator (SOI) MOSFET for analogue applicationsHAKIM, NUD; RAO, VR; VASI, J
2007Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operationNAINANI, A; PALIT, S; SINGH, PK; GANGULY, U; KRISHNA, N; VASI, J; MAHAPATRA, S
2001Device degradation of n-channel poly-Si TFTs due to high-field, hot-carrier and radiation stressingKHAMESRA, A; LAL, RAKESH; VASI, J; AKUMAR, KP; SIN, KO
2000Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETsMAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J
1998Device simulation for radiation and hot carrier effectsSHARMA, DK; EKBOTE, S; ZAMAN, P; SUBBARAMAN, S; DAS, A; VASI, J
1999A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETsMAHAPATRA, S; PARIKH, CD; VASI, J; RAMGOPAL RAO, V; VISWANATHAN, CR
1995DISPERSIVE TRANSPORT OF CARRIERS UNDER NONUNIFORM ELECTRIC-FIELDTALWALKAR, N; DAS, A; VASI, J
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