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DSpace at IIT Bombay >
Browsing by Author SINGH, PK
Showing results 1 to 15 of 15
| Issue Date | Title | Author(s) | | 2010 | Applicability of dual layer metal nanocrystal flash memory for NAND 2 or 3-bit/cell operation : understanding the anomalous breakdown and optimization of P/E conditions | SINGH, P; SANDHYA, C; AULUCK, K; BISHT, G; SIVATHEJA, M; HOFMANN, R; MUKHOPADHYAY, G; MAHAPATRA, S; SINGH, PK; BISHT, KAG; SIVATHEJA, M; MUKHOPADHYAY, G; MAHAPATRA, S; HOFMANN, R |
| 2008 | Au nanocrystal flash memory reliability and failure analysis | SINGH, PK; SINGH, KK; HOFMANN, R; ARMSTRONG, K; KRISHNA, N; MAHAPATRA, S |
| 2007 | Development of a 3D simulator for metal Nanocrystal (NC) flash memories under NAND operation | NAINANI, A; PALIT, S; SINGH, PK; GANGULY, U; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2009 | Dual layer Pt metal nanocrystal flash for multi-level-cell NAND application | SINGH, PK; BISHT, G; MAHAPATRA, S; HOFMANN, R; SINGH, K |
| 1982 | EFFECT OF GUIDED WAVE ANALYSIS AND SURFACE FINISH ON DELTA-HEFF BY MAGNETO MICROWAVE KERR EFFECT | SINGH, PK; PRASAD, S |
| 2007 | Electrostatics and its effect on spatial distribution of tunnel current in metal Nanocrystal flash memories | NAINANI, ANEESH; ROY, ARUNASHU; SINGH, PK; MUKHOPADHYAY, GAUTAM; VASI, J |
| 2007 | Extensive reliability analysis of Tungsten dot NC devices embedded in HfAlO high-k dielectric under NAND (FN/FN) operation | SINGH, PK; NAINANI, A |
| 2008 | Metal nanocrystal memory with pt single- and dual-layer NC With low-Leakage AI2O3 Blocking Dielectric | SINGH, PK; BISHT, G; HOFMANN, R; SINGH, K; KRISHNA, N; MAHAPATRA, S |
| 2008 | Nitride engineering and the effect of interfaces on charge trap flash performance and reliability | SANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2007 | Partial crystallization of HfO2 for Two-Bit/Four-Level SONOS-Type flash memory | ZHANG, G; SAMANTA, SK; SINGH, PK; MA, FJ; YOO, MT; ROH, Y; YOO, WJ |
| 2009 | Performance and Reliability of Au and Pt Single-Layer Metal Nanocrystal Flash Memory Under NAND (FN/FN) Operation | SINGH, PK; HOFMANN, R; SINGH, KK; KRISHNA, N; MAHAPATRA, S |
| 2010 | Performance and Reliability Study of Single-Layer and Dual-Layer Platinum Nanocrystal Flash Memory Devices Under NAND Operation | SINGH, PK; BISHT, G; AULUCK, K; SIVATHEJA, M; HOFMANN, R; SINGH, KK; MAHAPATRA, S |
| 2009 | Recent advances in charge trap flash memories | SANDHYA, C; SINGH, PK; GUPTA, S; ROHRA, H; SHIVATHEJA, M; GANGULY, U; HOFMANN, R; MUKHOPADHYAY, G; MAHAPATRA, S; VASI, J |
| 2009 | Reliability of single and dual layer Pt Nanocrystal devices for NAND flash applications : a 2-region model for endurance defect generation | SINGH, PK; BISHT, G; SIVATHEJA, M; SANDHYA, C; MUKHOPADHYAY, G; MAHAPATRA, S; HOFMANN, R; SINGH, K; KRISHNA, N |
| 2010 | Tri-Level Resistive Switching in Metal-Nanocrystal-Based Al(2)O(3)/SiO(2) Gate Stack | CHEN, YN; PEY, KL; GOH, KEJ; LWIN, ZZ; SINGH, PK; MAHAPATRA, S |
Showing results 1 to 15 of 15
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