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DSpace at IIT Bombay >
Browsing by Author SANDHYA, C
Showing results 2 to 9 of 9
| Issue Date | Title | Author(s) | | 2008 | The effect of band gap engineering of the nitride storage node on performance and reliability of charge trap flash | SANDHYA, C; GANGULY, U; SINGH, KK; OLSEN, C; SEUTTER, SM; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2009 | Effect of SiN on Performance and Reliability of Charge Trap Flash (CTF) Under Fowler-Nordheim Tunneling Program/Erase Operation | SANDHYA, C; GANGULY, U; CHATTAR, N; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, JA; MAHAPATRA, S |
| 2009 | Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under (FN/FN) Operation | SANDHYA, C; OAK, AB; CHATTAR, N; JOSHI, AS; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S |
| 2009 | Influence of SiN composition on program and erase characteristics of SANOS-type flash memories | SANDHYA, C; GANGULY, U; APOORVA, B; OLSEN, C; SEUTTER, S; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S |
| 2008 | Nitride engineering and the effect of interfaces on charge trap flash performance and reliability | SANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2009 | Recent advances in charge trap flash memories | SANDHYA, C; SINGH, PK; GUPTA, S; ROHRA, H; SHIVATHEJA, M; GANGULY, U; HOFMANN, R; MUKHOPADHYAY, G; MAHAPATRA, S; VASI, J |
| 2009 | Reliability of single and dual layer Pt Nanocrystal devices for NAND flash applications : a 2-region model for endurance defect generation | SINGH, PK; BISHT, G; SIVATHEJA, M; SANDHYA, C; MUKHOPADHYAY, G; MAHAPATRA, S; HOFMANN, R; SINGH, K; KRISHNA, N |
| 2010 | Study of P/E Cycling Endurance Induced Degradation in SANOS Memories Under NAND (FN/FN) Operation | SANDHYA, C; OAK, AB; CHATTAR, N; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S |
Showing results 2 to 9 of 9
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