Browsing by Author RAO, VR

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Issue DateTitleAuthor(s)
2016OFET based explosive sensors using diketopyrrolopyrrole and metal organic framework composite active channel materialSURYA, SG; NAGARKAR, SS; GHOSH, SK; SONAR, P; RAO, VR
2008On the dc and noise properties of the gate current in epitaxial Ge p-channel metal oxide semiconductor field effect transistors with TiN/TaN/HfO(2)/SiO(2) gate stackMAJI, D; CRUPI, F; GIUSI, G; PACE, C; SIMOEN, E; CLAEYS, C; RAO, VR
2010On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD conditionSHRIVASTAVA, M; BYCHIKHIN, S; POGANY, D; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; GORNIK, E; RAO, VR
2010On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditionsSHRIVASTAVA, M; SCHNEIDER, J; BAGHINI, MS; GOSSNER, H; RAO, VR
2016On the Geometrically Dependent Quasi-Saturation and g(m) Reduction in Advanced DeMOS TransistorsSWAIN, PS; SHRIVASTAVA, M; BAGHINI, MS; GOSSNER, H; RAO, VR
2016On the Improved High-Frequency Linearity of Drain Extended MOS DevicesGUPTA, A; SHRIVASTAVA, M; BAGHINI, MS; SHARMA, DK; GOSSNER, H; RAO, VR
2017On-Chip Integration of Photodetector and Sensor: A Multimodal Photonic Device for Sensing ApplicationsROY, SC; KUNDU, T; RAO, VR; THUNDAT, T
2000Optimization and realization of sub 100nm channel length lateral asymmetric channel P-MOSFETSHEMKAR, M; VASI, J; RAO, VR; CHENG, B; WOO, JCS
2014Optimization of a plasma immersion ion implantation process for shallow junctions in siliconRAY, A; NORI, R; BHATT, P; LODHA, S; PINTO, R; RAO, VR; JOMARD, F; NEUMANN-SPALLART, M
2014Optimization of a plasma immersion ion implantation process for shallow junctions in siliconRAY, A; NORI, R; BHATT, P; LODHA, S; PINTO, R; RAO, VR; JOMARD, F; NEUMANN-SPALLART, M
2002Optimization of sub 100 nm gamma-gate Si-MOSFETs for RF applicationsGUPTA, M; VIDYA, V; RAO, VR; TO, KH; WOO, JCS
2009Optimum Body Bias Constraints for Leakage Reduction in High-k Complementary Metal-Oxide-Semiconductor CircuitsCHAWDA, PK; ANAND, B; RAO, VR
2012Organic CantiFET: A Nanomechanical Polymer Cantilever Sensor With Integrated OFETSEENA, V; NIGAM, A; PANT, P; MUKHERJI, S; RAO, VR
2008Organic FETs with HWCVD silicon nitride as a passivation layer and gate dielectricTIWARI, SP; SNINIVAS, P; SHRIRAM, S; KALE, NS; MHAISALKAR, SG; RAO, VR
2007Parasitic effects in multi-gate MOSFETsKOBAYASHI, Y; MANOJ, CR; TSUTSUI, K; HARIHARAN, V; KAKUSHIMA, K; RAO, VR; AHMET, P; IWAI, H
2006Parasitics effects in multi gate MOSFETsMANOJ, CR; MANGAL, A; RAO, VR; TSUTSUI, K; IWAI, H
2015Part I: High-Voltage MOS Device Design for Improved Static and RF PerformanceGUPTA, A; SHRIVASTAVA, M; BAGHINI, MS; SHARMA, DK; GOSSNER, H; RAO, VR
2013Part I: Impact of Field-Induced Quantum Confinement on the Subthreshold Swing Behavior of Line TFETsWALKE, AM; VERHULST, AS; VANDOOREN, A; VERRECK, D; SIMOEN, E; RAO, VR; GROESENEKEN, G; COLLAERT, N; THEAN, AVY
2010Part I: Mixed-Signal Performance of Various High-Voltage Drain-Extended MOS DevicesSHRIVASTAVA, M; BAGHINI, MS; GOSSNER, H; RAO, VR
2010Part I: On the Behavior of STI-Type DeNMOS Device Under ESD ConditionsSHRIVASTAVA, M; GOSSNER, H; SHOJAEI, M; RAO, VR