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Browsing by Author RAMGOPAL RAO, V

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Issue DateTitleAuthor(s)
2007Patterned microfluidic channels using self-assembled hydroxy-phenyl porphyrin monolayerNAYAK, K; KULKARNI, PD; DEEPU, A; SITARAMAN, VR; PUNIDHA, SOUMYA; SAHA, AA; RAVIKANTH, M; MITRA, SK; MUKHERJI, S; RAMGOPAL RAO, V
2007Pentacene organic field effect transistors on flexible substrates with polymer dielectricsTIWARI, SP; RAMGOPAL RAO, V; HUEI SHAUN TAN; NAMDAS, EB; MHAISALKAR, SG
2001Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETsMAHAPATRA, S; RAMGOPAL RAO, V; CHENG, B; KHARE, M; PARIKH, CD; WOO, JCS; VASI, J
2002Performance and reliability of single halo deep sub-micron p-MOSFETs for analog applicationsJHA, NK; BAGHINI, MS; RAMGOPAL RAO, V
2005Performance of channel engineered SDODEL MOSFET for mixed signal applicationsSARKAR, P; MALLIK, A; SARKAR, CK; RAMGOPAL RAO, V
2001Performance optimization of 60 nm channel length vertical MOSFETs using channel engineeringSHRIVASTAV, G; MAHAPATRA, S; RAMGOPAL RAO, V; VASI, J
2008Photoplastic NEMS with an encapsulated polysilicon piezoresistorKALE, NS; NAG, S; PINTO, RICHARD; RAMGOPAL RAO, V
2002Physical mechanisms for pulsed AC stress degradation in thin gate oxide MOSFETsMUTHA, YATIN M; LAL, RAKESH; RAMGOPAL RAO, V
1998Plasma process induced abnormal 1/f noise behavior in deep sub-micron MOSFETsRAMGOPAL RAO, V; WIJERATNE, G; CHU, D; BROZEK, T; VISWANATHAN, CR
2005Power-area evaluation of various double-gate RF mixer topologiesPATIL, MB; REDDY, MVR; SHARMA, DK; RAMGOPAL RAO, V
2003Reliability of ultrathin JVD silicon nitride MNSFETs under high field stressingMANJULA RANI, KN; RAMGOPAL RAO, V; VASI, J
2000Reliability studies on sub 100 nm SOI-MNSFETsMAHAPATRA, S; RAMGOPAL RAO, V; VASI, J; CHENG, B; WOO, JCS
2007Silanization and antibody immobilization on SU-8JOSHI, M; PINTO, RICHARD; RAMGOPAL RAO, V; MUKHERJI, SOUMYA
2004Silicon film thickness optimization for SOI-DTMOS from circuit performance considerationsDESAI, MP; ANAND, B; RAMGOPAL RAO, V
2007A simple and direct method for interface characterization of OFETsSRINIVAS, P; TIWARI, SP; RAVAL, HN; RAMESH, RN; CAHYADI, T; MHAISALKAR, SG; RAMGOPAL RAO, V
1997Simulation, fabrication and characterization of high performance planar-doped-barrier sub 100 nm channel MOSFETsRAMGOPAL RAO, V; HANSCH, W; EISELE, I
2003Small signal characteristics of thin film single halo SOI MOSFET for mixed mode applicationsNAJEEB-UD-DIN HAKIM; RAMGOPAL RAO, V; VASI, J
2007Solution-processed n-type organic field-effect transistors with high ON/ OFF current ratios based on fullerene derivativesTIWARI, SP; NAMDAS, EB; RAMGOPAL RAO, V
2004Stress voltage polarity dependence of JVD-Si3N4 MNSFET degradationVASI, J; MANJULA RANI, KN; RAMGOPAL RAO, V
2002The study of damage generation in n-channel MOS transistors operating in the substrate enhanced gate current regimeMOHAPATRA, NR; MAHAPATRA, S; RAMGOPAL RAO, V
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