Browsing by Author RAMGOPAL RAO, V

Jump to: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
or enter first few letters:  
Showing results 11 to 30 of 70 < previous   next >
Issue DateTitleAuthor(s)
1998Charge injection using gate-induced-drain-leakage current for characterization of plasma edge damage in CMOS devicesBROZEK, T; RAMGOPAL RAO, V; SRIDHARAN, A; WERKING, JD; CHAN, YD; VISWANATHAN, CR
2003CHISEL programming operation of scaled NOR flash EEPROMs-effect of voltage scaling, device scaling and technological parametersMAHAPATRA, S; MOHAPATRA, NR; NAIR, DR; RAMGOPAL RAO, V; SHUKURI, S; BUDE, JD
2000A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping techniqueMAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J
2003Detailed analysis of FIBL in MOS transistors with high-k gate dielectricsMOHAPATRA, NR; DESAI, MP; RAMGOPAL RAO, V
2007Device optimization of bulk FinFETs and its comparison with SOI FinFETsMANOJ, CR; MEENAKSHI, N; DHANYA, V; RAMGOPAL RAO, V
2000Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETsMAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J
1999A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETsMAHAPATRA, S; PARIKH, CD; VASI, J; RAMGOPAL RAO, V; VISWANATHAN, CR
2000Drain bias dependence of gate oxide reliability in conventional and asymmetrical channel MOSFETs in the low voltage regimeANIL, KG; MAHAPATRA, S; EISELE, I; RAMGOPAL RAO, V; VASI, J
2008Drain current model including velocity saturation for symmetric double-gate MOSFETsVENKATNARAYAN, HARIHARAN; VASI, J; RAMGOPAL RAO, V
2001Effect of fringing capacitances in sub 100 nm MOSFETs with high-K gate dielectricsMOHAPATRA, NR; DUTTA, A; DESAI, MP; RAMGOPAL RAO, V
2002The effect of high-K gate dielectrics on deep submicrometer CMOS device and circuit performanceDESAI, MP; MOHAPATRA, NR; NARENDRA, SG; RAMGOPAL RAO, V
2004The effect of LAC doping on deep submicrometer transistor capacitances and its influence on device RF performanceDESAI, MP; NARASIMHULU, K; NARENDRA, SG; RAMGOPAL RAO, V
2003Effect of programming biases on the reliability of CHE and CHISEL flash EEPROMsMOHAPATRA, NR; MAHAPATRA, S; RAMGOPAL RAO, V; SHUKURI, S; BUDE, JD
2006The effects of varying tilt angle of halo implant on the performance of sub 100nm LAC MOSFETsSARKAR, P; MALLIK, A; SARKAR, CK; RAMGOPAL RAO, V
2005Evaluation of the impact of layout on device and analog circuit performance with lateral asymmetric channel MOSFETsPATIL, MB; VINAY KUMAR, D; NARASIMHULU, K; REDDY, PS; BAGHINI, MS; SHARMA, DK; RAMGOPAL RAO, V
2009Fabrication and characterization of a polymeric microcantilever with an encapsulated hotwire CVD polysilicon piezoresistorKALE, NS; NAG, S; PINTO, RICHARD; RAMGOPAL RAO, V
2005Forward body-biased single halo MOS devices for low voltage analog circuitsNARASIMHULU, K; RAMGOPAL RAO, V
1997High-field stressing of LPCVD gate oxidesRAMGOPAL RAO, V; EISELE, I; PATRIKAR, RM; SHARMA, DK; GRABOLLA, T; VASI, J
2003Highly conducting doped poly-Si deposited by hot wire CVD and its applicability as gate material for CMOS devicesPATIL, SAMADHAN B; VAIRAGAR, ANAND V; KUMBHAR, ALKA A; SAHU, LAXMI; RAMGOPAL RAO, V; VENKATRAMANI, N; DUSANE, RO; SCHROEDER, B
1999Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping techniqueMAHAPATRA, S; RAMGOPAL RAO, V; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS