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DSpace at IIT Bombay >
Browsing by Author PARIKH, CD
Showing results 1 to 20 of 22
| Issue Date | Title | Author(s) | | 1999 | 100 nm channel length MNSFETs using a jet vapor deposited ultra-thin silicon nitride gate dielectric | MAHAPATRA, S; RAMGOPAL RAO, V; MANJULA RANI, KN; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS |
| 2002 | Analysis and design of superjunction power MOSFET: CoolMOS™ for improved on resistance and breakdown voltage using theory of novel voltage sustaining layer | KONDEKAR, PN; PATIL, MB; PARIKH, CD |
| 2002 | Analysis of breakdown voltage and on resistance of super junction power MOSFET CoolMOSTM using theory of novel voltage sustaining layer | KONDEKAR, PN; PARIKH, CD; PATIL, MB |
| 2002 | Analytical design methodology of a novel drift-layer for super-junction power MOSFET: CoolMOS (TM) | KONDEKAR, PN; PATIL, MB; PARIKH, CD |
| 2002 | Breakdown voltage and on resistance of super-junction power MOSFET : CoolMOS (TM) | KONDEKAR, PN; PATIL, MB; PARIKH, CD |
| 1999 | A compact model for the N-well resistor | PARIKH, CD; PATRIKAR, RM |
| 2000 | A comprehensive study of hot-carrier induced interface and oxide trap distributions in MOSFETs using a novel charge pumping technique | MAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J |
| 2000 | Device scaling effects on hot-carrier induced interface and oxide-trapped charge distributions in MOSFETs | MAHAPATRA, S; PARIKH, CD; RAMGOPAL RAO, V; VISWANATHAN, CR; VASI, J |
| 1999 | A direct charge pumping technique for spatial profiling of hot-carrier induced interface and oxide traps in MOSFETs | MAHAPATRA, S; PARIKH, CD; VASI, J; RAMGOPAL RAO, V; VISWANATHAN, CR |
| 1999 | Hot-carrier induced interface degradation in jet vapor deposited SiN MNSFETs as studied by a novel charge pumping technique | MAHAPATRA, S; RAMGOPAL RAO, V; PARIKH, CD; VASI, J; CHENG, B; KHARE, M; WOO, JCS |
| 1998 | A large signal non-quasistatic model for short-channel MOSFET's | SAILAJA, Y; PARIKH, CD |
| 1987 | MODELING OF A DEPLETION-MODE MOSFET | PARIKH, CD; VASI, J |
| 1988 | Modeling of a depletion-mode mosfet - response | PARIKH, CD; VASI, J |
| 2002 | Modeling of the CoolMOSTM transistor - Part I: device physics | PATIL, MB; DANIEL, BJ; PARIKH, CD |
| 2002 | Modeling of the CoolMOSTM transistor - Part II: DC model and parameter extraction | PATIL, MB; DANIEL, BJ; PARIKH, CD |
| 1999 | A new "multifrequency" charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's | MAHAPATRA, S; PARIKH, CD; VASI, J |
| 1999 | A new “multifrequency” charge pumping technique to profile hot-carrier-induced interface-state density in nMOSFET's | MAHAPATRA, S; PARIKH, CD; VASI, J |
| 1998 | A new quasi-static model for short-channel MOSFETs | DAMLE, P; PARIKH, CD |
| 1998 | A new technique to profile hot-carrier induced interface state generation in nMOSFETs using charge pumping | MAHAPATRA, S; PARIKH, CD; VASI, J |
| 2001 | Performance and hot-carrier reliability of 100 nm channel length jet vapor deposited Si3N4 MNSFETs | MAHAPATRA, S; RAMGOPAL RAO, V; CHENG, B; KHARE, M; PARIKH, CD; WOO, JCS; VASI, J |
Showing results 1 to 20 of 22
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