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DSpace at IIT Bombay >
Browsing by Author OLSEN, C
Showing results 6 to 13 of 13
| Issue Date | Title | Author(s) | | 2008 | The impact of gate dielectric nitridation methodology on NBTI of SiON p-MOSFETs as studied by UF-OTF technique | MAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S |
| 2008 | The impact of nitrogen engineering in silicon oxynitride gate dielectric on negative-bias temperature instability of p-MOSFETs: A study by ultrafast on-the-fly I-DLIN technique | MAHETA, VD; OLSEN, C; AHMED, K; MAHAPATRA, S |
| 2009 | Impact of SiN Composition Variation on SANOS Memory Performance and Reliability Under (FN/FN) Operation | SANDHYA, C; OAK, AB; CHATTAR, N; JOSHI, AS; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S |
| 2009 | Influence of SiN composition on program and erase characteristics of SANOS-type flash memories | SANDHYA, C; GANGULY, U; APOORVA, B; OLSEN, C; SEUTTER, S; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S |
| 2007 | Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I(DLIN) technique | KUMAR, EN; MAHETA, VD; PURAWAT, S; ISLAM, AE; OLSEN, C; AHMED, K; ALAM, MA; MAHAPATRA, S |
| 2009 | Material dependence of negative bias temperature instability (NBTI) stress and recovery in SiON p-MOSFETs | MAHAPATRA, S; MAHETA, VD; DEORA, S; KUMAR, EN; PURAWAT, S; OLSEN, C; AHMED, K; ISLAM, AE; ALAM, MA |
| 2008 | Nitride engineering and the effect of interfaces on charge trap flash performance and reliability | SANDHYA, C; GANGULY, U; SINGH, KK; SINGH, PK; OLSEN, C; SEUTTER, SM; HUNG, R; CONTI, G; AHMED, K; KRISHNA, N; VASI, J; MAHAPATRA, S |
| 2010 | Study of P/E Cycling Endurance Induced Degradation in SANOS Memories Under NAND (FN/FN) Operation | SANDHYA, C; OAK, AB; CHATTAR, N; GANGULY, U; OLSEN, C; SEUTTER, SM; DATE, L; HUNG, R; VASI, J; MAHAPATRA, S |
Showing results 6 to 13 of 13
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